Charge-transport characteristics in bistable resistive Poly(N-Vinylcarbazole) films

Yi Sheng Lai, Chia Hsun Tu, Dim Lee Kwong, J. S. Chen

研究成果: Article同行評審

48 引文 斯高帕斯(Scopus)

摘要

Charge-transport characteristics of bistable resistive poly(N-vinylcarbazole) films as a function of temperature have been investigated. It is found that the on-state charge transport is dominated by ohmic conduction, hopping with an energy scale of the order of ∼ 20 meV. The off-state charge transport appears to follow a transition from ohmic to space charge limited conduction with a shallow-trap distribution. Nonetheless, the poly(N-vinylcarbazole) (PVK) film does not possess its memory characteristics when operated at temperatures higher than 410 K. The PVK film can be operated at low voltage (<2 V) with a high on/off current ratio as large as 106.

原文English
頁(從 - 到)451-453
頁數3
期刊IEEE Electron Device Letters
27
發行號6
DOIs
出版狀態Published - 2006 六月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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