TY - GEN
T1 - Chemical vapor deposition of transfer-free graphene on SiO2/Si using a sacrificial copper film
AU - Chen, Yuchun
AU - Lo, Minjui
AU - Chang, Chihchun
AU - Lee, Pinyi
AU - Chung, Chenglung
AU - Tzeng, Yonhua
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015
Y1 - 2015
N2 - Graphene is deposited directly on a non-metal substrate, i.e. SiO2/Si with a sacrificial copper film. The copper film is either evaporated during prolonged growth time or removed by wet chemical etching after CVD graphene grows on it. This leaves the graphene sticking directly to the SiO2/Si without needing any transferring process. Effects of the copper film thickness, the growth time, and the wet chemical etching on the morphology and Raman scattering of the synthesized transfer-free graphene are analyzed and reported.
AB - Graphene is deposited directly on a non-metal substrate, i.e. SiO2/Si with a sacrificial copper film. The copper film is either evaporated during prolonged growth time or removed by wet chemical etching after CVD graphene grows on it. This leaves the graphene sticking directly to the SiO2/Si without needing any transferring process. Effects of the copper film thickness, the growth time, and the wet chemical etching on the morphology and Raman scattering of the synthesized transfer-free graphene are analyzed and reported.
UR - http://www.scopus.com/inward/record.url?scp=84964397399&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84964397399&partnerID=8YFLogxK
U2 - 10.1109/NANO.2015.7388665
DO - 10.1109/NANO.2015.7388665
M3 - Conference contribution
AN - SCOPUS:84964397399
T3 - IEEE-NANO 2015 - 15th International Conference on Nanotechnology
SP - 556
EP - 559
BT - IEEE-NANO 2015 - 15th International Conference on Nanotechnology
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015
Y2 - 27 July 2015 through 30 July 2015
ER -