Chemical vapor deposition of transfer-free graphene on SiO2/Si using a sacrificial copper film

Yuchun Chen, Minjui Lo, Chihchun Chang, Pinyi Lee, Chenglung Chung, Yonhua Tzeng

研究成果: Conference contribution

3 引文 斯高帕斯(Scopus)

摘要

Graphene is deposited directly on a non-metal substrate, i.e. SiO2/Si with a sacrificial copper film. The copper film is either evaporated during prolonged growth time or removed by wet chemical etching after CVD graphene grows on it. This leaves the graphene sticking directly to the SiO2/Si without needing any transferring process. Effects of the copper film thickness, the growth time, and the wet chemical etching on the morphology and Raman scattering of the synthesized transfer-free graphene are analyzed and reported.

原文English
主出版物標題IEEE-NANO 2015 - 15th International Conference on Nanotechnology
發行者Institute of Electrical and Electronics Engineers Inc.
頁面556-559
頁數4
ISBN(電子)9781467381550
DOIs
出版狀態Published - 2015 一月 1
事件15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 - Rome, Italy
持續時間: 2015 七月 272015 七月 30

出版系列

名字IEEE-NANO 2015 - 15th International Conference on Nanotechnology

Other

Other15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015
國家Italy
城市Rome
期間15-07-2715-07-30

All Science Journal Classification (ASJC) codes

  • Process Chemistry and Technology
  • Electrical and Electronic Engineering
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films

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