Combinatorial methodology for the exploration of metal gate electrodes on HfO2 for the advanced gate stack

Kao-Shuo Chang, M. L. Green, J. Suehle, J. Hattrick-Simpersb, I. Takeuchi, K. Ohmori, T. Chikyow, S. De Gendt, P. Majhi

研究成果: Conference contribution

摘要

Combinatorial methodology offers an efficient platform to accelerate the exploration of new materials. We demonstrate the effectiveness of this technique on the study of new metal gates for the advanced gate stack. We report two examples, Ni-Ti-Pt ternary composition spreads, and Tai.xAl xNy binary composition spreads, using a combinatorial sputtering tool. For the Ni-Ti-Pt library, wavelength dispersive spectroscopy (WDS), and scanning x-ray microdiffraction spectroscopy were used to determine compositions, and structures, respectively. Scanning Kelvin probe microscopy (SKPM) was used to measure work functions (Φm) directly. Our results show Φm variation is consistent with the variation for the corresponding bulk values. For the Tai.xAlxN y metal gate electrodes, the extracted equivalent oxide thickness (EOT) map suggests thermal stability of the stack, and flat-band voltage shift (△Vfb) varied systematically as per our expectation.

原文English
主出版物標題ECS Transactions - Dielectrics for Nanosystems 3
主出版物子標題Materials Science, Processing, Reliability, and Manufacturing
頁面151-159
頁數9
版本2
DOIs
出版狀態Published - 2008 十一月 17
事件3rd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 213th ECS Meeting - Phoenix, AZ, United States
持續時間: 2008 五月 182008 五月 22

出版系列

名字ECS Transactions
號碼2
13
ISSN(列印)1938-5862
ISSN(電子)1938-6737

Other

Other3rd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 213th ECS Meeting
國家United States
城市Phoenix, AZ
期間08-05-1808-05-22

指紋

Electrodes
Metals
Chemical analysis
Wavelength dispersive spectroscopy
Scanning
Sputtering
Microscopic examination
Thermodynamic stability
Spectroscopy
X rays
Oxides
Electric potential

All Science Journal Classification (ASJC) codes

  • Engineering(all)

引用此文

Chang, K-S., Green, M. L., Suehle, J., Hattrick-Simpersb, J., Takeuchi, I., Ohmori, K., ... Majhi, P. (2008). Combinatorial methodology for the exploration of metal gate electrodes on HfO2 for the advanced gate stack. 於 ECS Transactions - Dielectrics for Nanosystems 3: Materials Science, Processing, Reliability, and Manufacturing (2 編輯, 頁 151-159). (ECS Transactions; 卷 13, 編號 2). https://doi.org/10.1149/1.2908627
Chang, Kao-Shuo ; Green, M. L. ; Suehle, J. ; Hattrick-Simpersb, J. ; Takeuchi, I. ; Ohmori, K. ; Chikyow, T. ; De Gendt, S. ; Majhi, P. / Combinatorial methodology for the exploration of metal gate electrodes on HfO2 for the advanced gate stack. ECS Transactions - Dielectrics for Nanosystems 3: Materials Science, Processing, Reliability, and Manufacturing. 2. 編輯 2008. 頁 151-159 (ECS Transactions; 2).
@inproceedings{b282a15762924ecfa4e89f0998db1d2d,
title = "Combinatorial methodology for the exploration of metal gate electrodes on HfO2 for the advanced gate stack",
abstract = "Combinatorial methodology offers an efficient platform to accelerate the exploration of new materials. We demonstrate the effectiveness of this technique on the study of new metal gates for the advanced gate stack. We report two examples, Ni-Ti-Pt ternary composition spreads, and Tai.xAl xNy binary composition spreads, using a combinatorial sputtering tool. For the Ni-Ti-Pt library, wavelength dispersive spectroscopy (WDS), and scanning x-ray microdiffraction spectroscopy were used to determine compositions, and structures, respectively. Scanning Kelvin probe microscopy (SKPM) was used to measure work functions (Φm) directly. Our results show Φm variation is consistent with the variation for the corresponding bulk values. For the Tai.xAlxN y metal gate electrodes, the extracted equivalent oxide thickness (EOT) map suggests thermal stability of the stack, and flat-band voltage shift (△Vfb) varied systematically as per our expectation.",
author = "Kao-Shuo Chang and Green, {M. L.} and J. Suehle and J. Hattrick-Simpersb and I. Takeuchi and K. Ohmori and T. Chikyow and {De Gendt}, S. and P. Majhi",
year = "2008",
month = "11",
day = "17",
doi = "10.1149/1.2908627",
language = "English",
isbn = "9781566776271",
series = "ECS Transactions",
number = "2",
pages = "151--159",
booktitle = "ECS Transactions - Dielectrics for Nanosystems 3",
edition = "2",

}

Chang, K-S, Green, ML, Suehle, J, Hattrick-Simpersb, J, Takeuchi, I, Ohmori, K, Chikyow, T, De Gendt, S & Majhi, P 2008, Combinatorial methodology for the exploration of metal gate electrodes on HfO2 for the advanced gate stack. 於 ECS Transactions - Dielectrics for Nanosystems 3: Materials Science, Processing, Reliability, and Manufacturing. 2 edn, ECS Transactions, 編號 2, 卷 13, 頁 151-159, 3rd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 213th ECS Meeting, Phoenix, AZ, United States, 08-05-18. https://doi.org/10.1149/1.2908627

Combinatorial methodology for the exploration of metal gate electrodes on HfO2 for the advanced gate stack. / Chang, Kao-Shuo; Green, M. L.; Suehle, J.; Hattrick-Simpersb, J.; Takeuchi, I.; Ohmori, K.; Chikyow, T.; De Gendt, S.; Majhi, P.

ECS Transactions - Dielectrics for Nanosystems 3: Materials Science, Processing, Reliability, and Manufacturing. 2. 編輯 2008. p. 151-159 (ECS Transactions; 卷 13, 編號 2).

研究成果: Conference contribution

TY - GEN

T1 - Combinatorial methodology for the exploration of metal gate electrodes on HfO2 for the advanced gate stack

AU - Chang, Kao-Shuo

AU - Green, M. L.

AU - Suehle, J.

AU - Hattrick-Simpersb, J.

AU - Takeuchi, I.

AU - Ohmori, K.

AU - Chikyow, T.

AU - De Gendt, S.

AU - Majhi, P.

PY - 2008/11/17

Y1 - 2008/11/17

N2 - Combinatorial methodology offers an efficient platform to accelerate the exploration of new materials. We demonstrate the effectiveness of this technique on the study of new metal gates for the advanced gate stack. We report two examples, Ni-Ti-Pt ternary composition spreads, and Tai.xAl xNy binary composition spreads, using a combinatorial sputtering tool. For the Ni-Ti-Pt library, wavelength dispersive spectroscopy (WDS), and scanning x-ray microdiffraction spectroscopy were used to determine compositions, and structures, respectively. Scanning Kelvin probe microscopy (SKPM) was used to measure work functions (Φm) directly. Our results show Φm variation is consistent with the variation for the corresponding bulk values. For the Tai.xAlxN y metal gate electrodes, the extracted equivalent oxide thickness (EOT) map suggests thermal stability of the stack, and flat-band voltage shift (△Vfb) varied systematically as per our expectation.

AB - Combinatorial methodology offers an efficient platform to accelerate the exploration of new materials. We demonstrate the effectiveness of this technique on the study of new metal gates for the advanced gate stack. We report two examples, Ni-Ti-Pt ternary composition spreads, and Tai.xAl xNy binary composition spreads, using a combinatorial sputtering tool. For the Ni-Ti-Pt library, wavelength dispersive spectroscopy (WDS), and scanning x-ray microdiffraction spectroscopy were used to determine compositions, and structures, respectively. Scanning Kelvin probe microscopy (SKPM) was used to measure work functions (Φm) directly. Our results show Φm variation is consistent with the variation for the corresponding bulk values. For the Tai.xAlxN y metal gate electrodes, the extracted equivalent oxide thickness (EOT) map suggests thermal stability of the stack, and flat-band voltage shift (△Vfb) varied systematically as per our expectation.

UR - http://www.scopus.com/inward/record.url?scp=55849151694&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=55849151694&partnerID=8YFLogxK

U2 - 10.1149/1.2908627

DO - 10.1149/1.2908627

M3 - Conference contribution

AN - SCOPUS:55849151694

SN - 9781566776271

T3 - ECS Transactions

SP - 151

EP - 159

BT - ECS Transactions - Dielectrics for Nanosystems 3

ER -

Chang K-S, Green ML, Suehle J, Hattrick-Simpersb J, Takeuchi I, Ohmori K 等. Combinatorial methodology for the exploration of metal gate electrodes on HfO2 for the advanced gate stack. 於 ECS Transactions - Dielectrics for Nanosystems 3: Materials Science, Processing, Reliability, and Manufacturing. 2 編輯 2008. p. 151-159. (ECS Transactions; 2). https://doi.org/10.1149/1.2908627