Comment on "annealing behavior of a proton irradiated Al xGa1-xN/GaN high electron mobility transistors grown by MBE" (multiple letters)

Long Fan, Yue Hao, S. J. Cai, Y. S. Tang, R. Li, Y. Y. Wei, L. Wong, Y. L. Chen, K. L. Wang, M. Chen, Y. F. Zhao, R. D. Schrimpf, J. C. Keay, K. I. Galloway

研究成果: Letter同行評審

1 引文 斯高帕斯(Scopus)
原文English
頁(從 - 到)1715-1716
頁數2
期刊IEEE Transactions on Electron Devices
50
發行號7
DOIs
出版狀態Published - 2003

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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