Comment on "annealing behavior of a proton irradiated Al xGa1-xN/GaN high electron mobility transistors grown by MBE" (multiple letters)

Long Fan; Yue Hao; S. J. Cai; Y. S. Tang; R. Li; Y. Y. Wei; L. Wong; Y. L. Chen; K. L. Wang; M. Chen; Y. F. Zhao; R. D. Schrimpf; J. C. Keay; K. I. Galloway

doi:10.1109/TED.2003.814976

Comment on "annealing behavior of a proton irradiated Al _xGa_1-xN/GaN high electron mobility transistors grown by MBE" (multiple letters)

Long Fan
, Yue Hao
, S. J. Cai
, Y. S. Tang
, R. Li
, Y. Y. Wei
, L. Wong
, Y. L. Chen
, K. L. Wang
, M. Chen
, Y. F. Zhao
, R. D. Schrimpf
, J. C. Keay
, K. I. Galloway

電機資訊學院

研究成果: Letter › 同行評審

2 引文斯高帕斯（Scopus）

原文	English
頁（從 - 到）	1715-1716
頁數	2
期刊	IEEE Transactions on Electron Devices
卷	50
發行號	7
DOIs	https://doi.org/10.1109/TED.2003.814976
出版狀態	Published - 2003

All Science Journal Classification (ASJC) codes

電子、光磁材料
電氣與電子工程

存取文件

10.1109/TED.2003.814976

其它文件與鏈接

引用此

Fan, L., Hao, Y., Cai, S. J., Tang, Y. S., Li, R., Wei, Y. Y., Wong, L., Chen, Y. L., Wang, K. L., Chen, M., Zhao, Y. F., Schrimpf, R. D., Keay, J. C., & Galloway, K. I. (2003). Comment on "annealing behavior of a proton irradiated Al _xGa_1-xN/GaN high electron mobility transistors grown by MBE" (multiple letters). IEEE Transactions on Electron Devices, 50(7), 1715-1716. https://doi.org/10.1109/TED.2003.814976

@article{4fc705fbdd1f4ea6927bf975750f79fc,

title = "Comment on {"}annealing behavior of a proton irradiated Al xGa1-xN/GaN high electron mobility transistors grown by MBE{"} (multiple letters)",

author = "Long Fan and Yue Hao and Cai, \{S. J.\} and Tang, \{Y. S.\} and R. Li and Wei, \{Y. Y.\} and L. Wong and Chen, \{Y. L.\} and Wang, \{K. L.\} and M. Chen and Zhao, \{Y. F.\} and Schrimpf, \{R. D.\} and Keay, \{J. C.\} and Galloway, \{K. I.\}",

year = "2003",

doi = "10.1109/TED.2003.814976",

language = "English",

volume = "50",

pages = "1715--1716",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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}

Fan, L, Hao, Y, Cai, SJ, Tang, YS, Li, R, Wei, YY, Wong, L, Chen, YL, Wang, KL, Chen, M, Zhao, YF, Schrimpf, RD, Keay, JC & Galloway, KI 2003, 'Comment on "annealing behavior of a proton irradiated Al _xGa_1-xN/GaN high electron mobility transistors grown by MBE" (multiple letters)', IEEE Transactions on Electron Devices, 卷 50, 編號 7, 頁 1715-1716. https://doi.org/10.1109/TED.2003.814976

TY - JOUR

T1 - Comment on "annealing behavior of a proton irradiated Al xGa1-xN/GaN high electron mobility transistors grown by MBE" (multiple letters)

AU - Fan, Long

AU - Hao, Yue

AU - Cai, S. J.

AU - Tang, Y. S.

AU - Li, R.

AU - Wei, Y. Y.

AU - Wong, L.

AU - Chen, Y. L.

AU - Wang, K. L.

AU - Chen, M.

AU - Zhao, Y. F.

AU - Schrimpf, R. D.

AU - Keay, J. C.

AU - Galloway, K. I.

PY - 2003

Y1 - 2003

UR - https://www.scopus.com/pages/publications/0043028276

UR - https://www.scopus.com/pages/publications/0043028276#tab=citedBy

U2 - 10.1109/TED.2003.814976

DO - 10.1109/TED.2003.814976

M3 - Letter

AN - SCOPUS:0043028276

SN - 0018-9383

VL - 50

SP - 1715

EP - 1716

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 7

ER -