TY - GEN
T1 - Compact models for real device effects in FinFETs
T2 - 2012 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012
AU - Venugopalan, Sriramkumar
AU - Kari, Muhammed A.
AU - Niknejad, Ali M.
AU - Hu, Chenming
AU - Lu, Darsen D.
N1 - Funding Information:
This work was supported by Semiconductor Research Corporation (SRC), Task IDs : 1149 and 2055
Publisher Copyright:
© 2012 IEEE.
PY - 2012
Y1 - 2012
N2 - A novel geometrically scalable, phenomenological model for quantum mechanical carrier charge centroid in thin fins is presented. A model for capturing the capacitance characteristics of a graded double-junction arising out of punchthrough stop implant in bulk-FinFETs is also proposed. Developed models have been included in BSIM-CMG multi-gate transistor compact model.
AB - A novel geometrically scalable, phenomenological model for quantum mechanical carrier charge centroid in thin fins is presented. A model for capturing the capacitance characteristics of a graded double-junction arising out of punchthrough stop implant in bulk-FinFETs is also proposed. Developed models have been included in BSIM-CMG multi-gate transistor compact model.
UR - http://www.scopus.com/inward/record.url?scp=85088029201&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85088029201&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:85088029201
T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
SP - 292
EP - 295
BT - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 5 September 2012 through 7 September 2012
ER -