TY - GEN
T1 - Compact models for sub-22nm MOSFETs
AU - Chauhan, Y. S.
AU - Lu, D. D.
AU - Venugopalan, S.
AU - Karim, M. A.
AU - Niknejad, A.
AU - Hu, C.
PY - 2011
Y1 - 2011
N2 - FinFET and UTBSOI (or ETSOI) FET are the two promising multi-gate FET candidates for sub-22nm CMOS technology. The BSIM-CMG and BSIM-IMG are the surface potential based physical compact models for multi-gate MOSFETs. The BSIM-CMG model has been developed to model common symmetric double, triple, quadruple and surround gate MOSFET. The BSIM-IMG model has been developed to model independent double-gate MOSFET capturing threshold voltage variation with back gate bias. Both models have been verified by simulation /measurements and show excellent results for all types of real device effects like SCE, DIBL, mobility degradation, poly depletion, QME etc.
AB - FinFET and UTBSOI (or ETSOI) FET are the two promising multi-gate FET candidates for sub-22nm CMOS technology. The BSIM-CMG and BSIM-IMG are the surface potential based physical compact models for multi-gate MOSFETs. The BSIM-CMG model has been developed to model common symmetric double, triple, quadruple and surround gate MOSFET. The BSIM-IMG model has been developed to model independent double-gate MOSFET capturing threshold voltage variation with back gate bias. Both models have been verified by simulation /measurements and show excellent results for all types of real device effects like SCE, DIBL, mobility degradation, poly depletion, QME etc.
UR - https://www.scopus.com/pages/publications/81455143096
UR - https://www.scopus.com/pages/publications/81455143096#tab=citedBy
M3 - Conference contribution
AN - SCOPUS:81455143096
SN - 9781439871393
T3 - Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
SP - 720
EP - 725
BT - Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
T2 - Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
Y2 - 13 June 2011 through 16 June 2011
ER -