This work comprehensively investigates device characteristics of a δ -doped In0.45 Al0.55 As In0.53 Ga0.47 AsGaAs metamorphic high-electron-mobility transistors (HEMTs) with different gate alloys, including TiAu, NiAu, PtAu, and Au. The impact-ionization-related kink effects on the device performances are found to be significantly improved by depositing the high-barrier-height gate alloys. As compared to conventional Au-gated metamorphic HEMTs, the devices with TiAu, NiAu, and PtAu gate alloys have shown superior low-noise, high-power, and high-linearity gain performances, respectively.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry