Comparative studies of δ -doped In0.45 Al0.55 as in0.53 Ga0.47 AsGaAs metamorphic HEMTs with Au, TiAu, NiAu, and PtAu gates

Ke Hua Su, Wei Chou Hsu, Ching Sung Lee, I. Liang Chen, Yeong Jia Chen, Chang Luen Wu

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

This work comprehensively investigates device characteristics of a δ -doped In0.45 Al0.55 As In0.53 Ga0.47 AsGaAs metamorphic high-electron-mobility transistors (HEMTs) with different gate alloys, including TiAu, NiAu, PtAu, and Au. The impact-ionization-related kink effects on the device performances are found to be significantly improved by depositing the high-barrier-height gate alloys. As compared to conventional Au-gated metamorphic HEMTs, the devices with TiAu, NiAu, and PtAu gate alloys have shown superior low-noise, high-power, and high-linearity gain performances, respectively.

原文English
文章編號065611JES
頁(從 - 到)G996-G1000
期刊Journal of the Electrochemical Society
153
發行號11
DOIs
出版狀態Published - 2006

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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