Comparative studies of normally-off Al0.26Ga0.74N/AlN/GaN/Si high electron mobility transistors with different gate structures

Ching Sung Lee, Wei-Chou Hsu, Han Yin Liu, Si Fu Chen, Yu Chang Chen, Shen Tin Yang

研究成果: Article

3 引文 (Scopus)

摘要

Systematic designs to achieve normally-off operation and improved device performance for Al0.26Ga0.74N/AlN/GaN high electron mobility transistors (HEMTs) grown on a Si substrate are investigated in this work. The step-by-step approach includes: (1) devising a thin AlGaN/AlN composite barrier, (2) introducing fluoride ions within the active region by using CF4 plasma treatment, (3) growing the Al2O3 oxide passivation layers within gate-drain/source regions by using a cost-effective ozone water oxidization technique, and (4) integrating a metal-oxide-semiconductor gate (MOS-gate) design with high-k Al2O3 gate dielectric. Devices with four different evolutionary gate structures have been compared and studied. Variations of threshold voltage (Vth), Hooge coefficients (αH), maximum drain-source current density (IDS, max), maximum extrinsic transconductance (gm, max), gate-voltage swing (GVS) linearity, two-terminal gate-drain breakdown/turn-on voltages (BVGD/Von), on/off current ratio (Ion/Ioff), and high-temperature characteristics up to 450 K are also investigated.

原文English
頁(從 - 到)39-43
頁數5
期刊Materials Science in Semiconductor Processing
66
DOIs
出版狀態Published - 2017 八月 1

指紋

High electron mobility transistors
high electron mobility transistors
Ions
Ozone
Gate dielectrics
Transconductance
Electric potential
Fluorides
Threshold voltage
Passivation
Oxides
Current density
Metals
Plasmas
Water
Composite materials
Substrates
Costs
electric potential
transconductance

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

引用此文

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abstract = "Systematic designs to achieve normally-off operation and improved device performance for Al0.26Ga0.74N/AlN/GaN high electron mobility transistors (HEMTs) grown on a Si substrate are investigated in this work. The step-by-step approach includes: (1) devising a thin AlGaN/AlN composite barrier, (2) introducing fluoride ions within the active region by using CF4 plasma treatment, (3) growing the Al2O3 oxide passivation layers within gate-drain/source regions by using a cost-effective ozone water oxidization technique, and (4) integrating a metal-oxide-semiconductor gate (MOS-gate) design with high-k Al2O3 gate dielectric. Devices with four different evolutionary gate structures have been compared and studied. Variations of threshold voltage (Vth), Hooge coefficients (αH), maximum drain-source current density (IDS, max), maximum extrinsic transconductance (gm, max), gate-voltage swing (GVS) linearity, two-terminal gate-drain breakdown/turn-on voltages (BVGD/Von), on/off current ratio (Ion/Ioff), and high-temperature characteristics up to 450 K are also investigated.",
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Comparative studies of normally-off Al0.26Ga0.74N/AlN/GaN/Si high electron mobility transistors with different gate structures. / Lee, Ching Sung; Hsu, Wei-Chou; Liu, Han Yin; Chen, Si Fu; Chen, Yu Chang; Yang, Shen Tin.

於: Materials Science in Semiconductor Processing, 卷 66, 01.08.2017, p. 39-43.

研究成果: Article

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AU - Chen, Yu Chang

AU - Yang, Shen Tin

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