Comparative studies on AlGaN/GaN MOS-HEMTs with stacked La2O3/Al2O3 dielectric structures

Han Yin Liu, Ching Sung Lee, Fu Chen Liao, Wei-Chou Hsu, Bo Yi Chou, Jung Hui Tsai, Hsin Yuan Lee

研究成果: Article

7 引文 (Scopus)

摘要

This work provides comparative studies of AlGaN/GaN MOS-HEMT with the devised stacked La2O3/Al2O3 dielectric structure with respect to a conventional Schottky-gate HEMT and a reference La2O3-dielectric MOS-HEMT, which were all fabricated on the identical epitaxial layers. The La2O3/Al2O3 stacked dielectrics are formed by using RF magnetron sputter/H2O2 oxidization. Transmission electron microscopy (TEM), capacitance-voltage (C-V) measurement with different frequency, and low-frequency noise (LFN) analysis were used to study the interface and oxide quality. Comprehensive studies on electrical and thermal stability characteristics have been performed. Improved transconductance gain (gm), current drive, breakdown, and thermal stability at 300-480 K are achieved in the present MOS-HEMT design.

原文English
頁(從 - 到)N115-N119
期刊ECS Journal of Solid State Science and Technology
3
發行號8
DOIs
出版狀態Published - 2014 一月 1

指紋

High electron mobility transistors
Thermodynamic stability
Gates (transistor)
Capacitance measurement
Voltage measurement
Epitaxial layers
Transconductance
Oxides
Transmission electron microscopy
aluminum gallium nitride

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

引用此文

Liu, Han Yin ; Lee, Ching Sung ; Liao, Fu Chen ; Hsu, Wei-Chou ; Chou, Bo Yi ; Tsai, Jung Hui ; Lee, Hsin Yuan. / Comparative studies on AlGaN/GaN MOS-HEMTs with stacked La2O3/Al2O3 dielectric structures. 於: ECS Journal of Solid State Science and Technology. 2014 ; 卷 3, 編號 8. 頁 N115-N119.
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abstract = "This work provides comparative studies of AlGaN/GaN MOS-HEMT with the devised stacked La2O3/Al2O3 dielectric structure with respect to a conventional Schottky-gate HEMT and a reference La2O3-dielectric MOS-HEMT, which were all fabricated on the identical epitaxial layers. The La2O3/Al2O3 stacked dielectrics are formed by using RF magnetron sputter/H2O2 oxidization. Transmission electron microscopy (TEM), capacitance-voltage (C-V) measurement with different frequency, and low-frequency noise (LFN) analysis were used to study the interface and oxide quality. Comprehensive studies on electrical and thermal stability characteristics have been performed. Improved transconductance gain (gm), current drive, breakdown, and thermal stability at 300-480 K are achieved in the present MOS-HEMT design.",
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Comparative studies on AlGaN/GaN MOS-HEMTs with stacked La2O3/Al2O3 dielectric structures. / Liu, Han Yin; Lee, Ching Sung; Liao, Fu Chen; Hsu, Wei-Chou; Chou, Bo Yi; Tsai, Jung Hui; Lee, Hsin Yuan.

於: ECS Journal of Solid State Science and Technology, 卷 3, 編號 8, 01.01.2014, p. N115-N119.

研究成果: Article

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AU - Liu, Han Yin

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AU - Hsu, Wei-Chou

AU - Chou, Bo Yi

AU - Tsai, Jung Hui

AU - Lee, Hsin Yuan

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