Comparative studies on AlGaN/GaN/Si MOS-HFETs with Al2O3/TiO2 stacked dielectrics by using an ultrasonic spray pyrolysis deposition technique

Ching Sung Lee, Wei Chou Hsu, Bo Jung Chiang, Han Yin Liu, Hsin Yuan Lee

研究成果: Article

6 引文 (Scopus)

摘要

Al0.26Ga0.74N/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) grown on a Si substrate with Al2O3/TiO2 stacked gate dielectrics formed by using non-vacuum ultrasonic spray pyrolysis deposition (USPD) technique are investigated. High permittivity (k) values of Al2O3 and TiO2 were characterized to be 9 and 46.1, respectively, with an equal layer thickness of 10 nm. The present MOS-HFET (Schottky-gate HFET) design has demonstrated enhanced device characteristics at 300 K, including maximum drain-source current density (I DS,max) of 725 (530) mA/mm, I DS at V GS = 0 V (I DSS0) of 471 (383) mA/mm, gate-voltage swing (GVS) of 2.5 (1.6) V, two-terminal gate-drain breakdown voltage (BV GD) of -182 (-121) V, turn-on voltage (V on) of 4.9 (3.2) V, three-terminal off-state drain-source breakdown voltage (BV DS) of 174 (103) V, on/off current ratio (I on/I off) of 5.6 ×107 (3.7 ×103), unity-gain cut-off frequency (f T) of 10.3 (6.8) GHz, maximum oscillation frequency (f max) of 14.8 (8.6) GHz, and power-added efficiency (P.A.E.) of 38.5% (31.7%) at 2.4 GHz. High temperature device characteristics up to 450 K are also discussed.

原文English
文章編號055012
期刊Semiconductor Science and Technology
32
發行號5
DOIs
出版狀態Published - 2017 四月 5

指紋

Spray pyrolysis
High electron mobility transistors
Electric breakdown
metal oxide semiconductors
pyrolysis
sprayers
field effect transistors
ultrasonics
Ultrasonics
Metals
Gate dielectrics
Cutoff frequency
Electric potential
electrical faults
Permittivity
Current density
electric potential
power efficiency
Substrates
unity

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

引用此文

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title = "Comparative studies on AlGaN/GaN/Si MOS-HFETs with Al2O3/TiO2 stacked dielectrics by using an ultrasonic spray pyrolysis deposition technique",
abstract = "Al0.26Ga0.74N/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) grown on a Si substrate with Al2O3/TiO2 stacked gate dielectrics formed by using non-vacuum ultrasonic spray pyrolysis deposition (USPD) technique are investigated. High permittivity (k) values of Al2O3 and TiO2 were characterized to be 9 and 46.1, respectively, with an equal layer thickness of 10 nm. The present MOS-HFET (Schottky-gate HFET) design has demonstrated enhanced device characteristics at 300 K, including maximum drain-source current density (I DS,max) of 725 (530) mA/mm, I DS at V GS = 0 V (I DSS0) of 471 (383) mA/mm, gate-voltage swing (GVS) of 2.5 (1.6) V, two-terminal gate-drain breakdown voltage (BV GD) of -182 (-121) V, turn-on voltage (V on) of 4.9 (3.2) V, three-terminal off-state drain-source breakdown voltage (BV DS) of 174 (103) V, on/off current ratio (I on/I off) of 5.6 ×107 (3.7 ×103), unity-gain cut-off frequency (f T) of 10.3 (6.8) GHz, maximum oscillation frequency (f max) of 14.8 (8.6) GHz, and power-added efficiency (P.A.E.) of 38.5{\%} (31.7{\%}) at 2.4 GHz. High temperature device characteristics up to 450 K are also discussed.",
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Comparative studies on AlGaN/GaN/Si MOS-HFETs with Al2O3/TiO2 stacked dielectrics by using an ultrasonic spray pyrolysis deposition technique. / Lee, Ching Sung; Hsu, Wei Chou; Chiang, Bo Jung; Liu, Han Yin; Lee, Hsin Yuan.

於: Semiconductor Science and Technology, 卷 32, 編號 5, 055012, 05.04.2017.

研究成果: Article

TY - JOUR

T1 - Comparative studies on AlGaN/GaN/Si MOS-HFETs with Al2O3/TiO2 stacked dielectrics by using an ultrasonic spray pyrolysis deposition technique

AU - Lee, Ching Sung

AU - Hsu, Wei Chou

AU - Chiang, Bo Jung

AU - Liu, Han Yin

AU - Lee, Hsin Yuan

PY - 2017/4/5

Y1 - 2017/4/5

N2 - Al0.26Ga0.74N/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) grown on a Si substrate with Al2O3/TiO2 stacked gate dielectrics formed by using non-vacuum ultrasonic spray pyrolysis deposition (USPD) technique are investigated. High permittivity (k) values of Al2O3 and TiO2 were characterized to be 9 and 46.1, respectively, with an equal layer thickness of 10 nm. The present MOS-HFET (Schottky-gate HFET) design has demonstrated enhanced device characteristics at 300 K, including maximum drain-source current density (I DS,max) of 725 (530) mA/mm, I DS at V GS = 0 V (I DSS0) of 471 (383) mA/mm, gate-voltage swing (GVS) of 2.5 (1.6) V, two-terminal gate-drain breakdown voltage (BV GD) of -182 (-121) V, turn-on voltage (V on) of 4.9 (3.2) V, three-terminal off-state drain-source breakdown voltage (BV DS) of 174 (103) V, on/off current ratio (I on/I off) of 5.6 ×107 (3.7 ×103), unity-gain cut-off frequency (f T) of 10.3 (6.8) GHz, maximum oscillation frequency (f max) of 14.8 (8.6) GHz, and power-added efficiency (P.A.E.) of 38.5% (31.7%) at 2.4 GHz. High temperature device characteristics up to 450 K are also discussed.

AB - Al0.26Ga0.74N/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) grown on a Si substrate with Al2O3/TiO2 stacked gate dielectrics formed by using non-vacuum ultrasonic spray pyrolysis deposition (USPD) technique are investigated. High permittivity (k) values of Al2O3 and TiO2 were characterized to be 9 and 46.1, respectively, with an equal layer thickness of 10 nm. The present MOS-HFET (Schottky-gate HFET) design has demonstrated enhanced device characteristics at 300 K, including maximum drain-source current density (I DS,max) of 725 (530) mA/mm, I DS at V GS = 0 V (I DSS0) of 471 (383) mA/mm, gate-voltage swing (GVS) of 2.5 (1.6) V, two-terminal gate-drain breakdown voltage (BV GD) of -182 (-121) V, turn-on voltage (V on) of 4.9 (3.2) V, three-terminal off-state drain-source breakdown voltage (BV DS) of 174 (103) V, on/off current ratio (I on/I off) of 5.6 ×107 (3.7 ×103), unity-gain cut-off frequency (f T) of 10.3 (6.8) GHz, maximum oscillation frequency (f max) of 14.8 (8.6) GHz, and power-added efficiency (P.A.E.) of 38.5% (31.7%) at 2.4 GHz. High temperature device characteristics up to 450 K are also discussed.

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