Comparative study of double ion implant Ti-salicide and pre-amorphization implant Co-salicide for ultra-large-scale integration applications

We have investigated the interesting double ion implant (DII) Ti-salicide and pre-amorphization implant (PAI) Co-salicide techniques for ultra-large-scale integration (ULSI) applications. The DII technique is combined with germanium (or arsenic) PAI and Si ion-mixing processes. The sheet resistances both of n⁺ and p⁺ polysilicons are decreased when the DII Ti-salicide and PAI Co-salicide techniques are used. Moreover, the incomplete phase transformation of Ti-salicide is not observed in 0.2/μm wide polysilicon devices with the Ge DII process. Furthermore, the n⁺/p-well junction leakage current is reduced when the Si ion-mixing process is used. Experimentally, based on the studied DII Ti-salicide and PAI Co-salicide techniques, high-performance 0.2 μm CMOS devices have been successfully fabricated.