Comparative study of process variations in junctionless and conventional double-gate MOSFETs

Chun Yu Chen, Jyi Tsong Lin, Meng-Hsueh Chiang

研究成果: Conference contribution

12 引文 斯高帕斯(Scopus)

摘要

This work presents an in-detail investigation of process variations in symmetrical junctionless double-gate CMOS using 2D numerical simulation. General variability issues including oxide thickness, gate work function, and channel thickness are discussed. Uniform probability density function was assumed for the dopant atom location in the junctionless channel. Based on the statistical doping profiles, device simulation was performed by solving 2D drift-diffusion equations with modified local density approximation as used mostly in bulks device for quantum confinement. This paper is organized as follows. Section II introduces the simulation technique for device structure. Section III presents a comprehensive analysis for impact of process fluctuations on threshold voltage. Finally, conclusions are drawn.

原文English
主出版物標題IEEE Nanotechnology Materials and Devices Conference, IEEE NMDC 2013
發行者IEEE Computer Society
頁面81-83
頁數3
ISBN(列印)9781479933877
DOIs
出版狀態Published - 2013
事件2013 IEEE 8th Nanotechnology Materials and Devices Conference, IEEE NMDC 2013 - Tainan, Taiwan
持續時間: 2013 十月 62013 十月 9

Other

Other2013 IEEE 8th Nanotechnology Materials and Devices Conference, IEEE NMDC 2013
國家Taiwan
城市Tainan
期間13-10-0613-10-09

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials

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