Comparison of 10 nm GAA vs. FinFET 6-T SRAM performance and yield

Peng Zheng, Yi Bo Liao, Nattapol Damrongplasit, Meng Hsueh Chiang, Wei Chou Hsu, Tsu Jae King Liu

研究成果: Conference contribution

1 引文 (Scopus)

摘要

This work benchmarks the performance of GAA MOSFETs against that of optimized SOI FinFETs at 10 nm gate length. The yield of 6-T SRAM cells implemented with these advanced MOSFET structures is then investigated. GAA MOSFET technology is projected to provide for 0.1 V lower minimum cell operating voltage with reduced cell area.

原文English
主出版物標題2014 Silicon Nanoelectronics Workshop, SNW 2014
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781479956777
DOIs
出版狀態Published - 2015 十二月 4
事件Silicon Nanoelectronics Workshop, SNW 2014 - Honolulu, United States
持續時間: 2014 六月 82014 六月 9

出版系列

名字2014 Silicon Nanoelectronics Workshop, SNW 2014

Other

OtherSilicon Nanoelectronics Workshop, SNW 2014
國家United States
城市Honolulu
期間14-06-0814-06-09

指紋

Static random access storage
Electric potential
FinFET

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

引用此文

Zheng, P., Liao, Y. B., Damrongplasit, N., Chiang, M. H., Hsu, W. C., & Liu, T. J. K. (2015). Comparison of 10 nm GAA vs. FinFET 6-T SRAM performance and yield. 於 2014 Silicon Nanoelectronics Workshop, SNW 2014 [7348585] (2014 Silicon Nanoelectronics Workshop, SNW 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SNW.2014.7348585
Zheng, Peng ; Liao, Yi Bo ; Damrongplasit, Nattapol ; Chiang, Meng Hsueh ; Hsu, Wei Chou ; Liu, Tsu Jae King. / Comparison of 10 nm GAA vs. FinFET 6-T SRAM performance and yield. 2014 Silicon Nanoelectronics Workshop, SNW 2014. Institute of Electrical and Electronics Engineers Inc., 2015. (2014 Silicon Nanoelectronics Workshop, SNW 2014).
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abstract = "This work benchmarks the performance of GAA MOSFETs against that of optimized SOI FinFETs at 10 nm gate length. The yield of 6-T SRAM cells implemented with these advanced MOSFET structures is then investigated. GAA MOSFET technology is projected to provide for 0.1 V lower minimum cell operating voltage with reduced cell area.",
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Zheng, P, Liao, YB, Damrongplasit, N, Chiang, MH, Hsu, WC & Liu, TJK 2015, Comparison of 10 nm GAA vs. FinFET 6-T SRAM performance and yield. 於 2014 Silicon Nanoelectronics Workshop, SNW 2014., 7348585, 2014 Silicon Nanoelectronics Workshop, SNW 2014, Institute of Electrical and Electronics Engineers Inc., Silicon Nanoelectronics Workshop, SNW 2014, Honolulu, United States, 14-06-08. https://doi.org/10.1109/SNW.2014.7348585

Comparison of 10 nm GAA vs. FinFET 6-T SRAM performance and yield. / Zheng, Peng; Liao, Yi Bo; Damrongplasit, Nattapol; Chiang, Meng Hsueh; Hsu, Wei Chou; Liu, Tsu Jae King.

2014 Silicon Nanoelectronics Workshop, SNW 2014. Institute of Electrical and Electronics Engineers Inc., 2015. 7348585 (2014 Silicon Nanoelectronics Workshop, SNW 2014).

研究成果: Conference contribution

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Zheng P, Liao YB, Damrongplasit N, Chiang MH, Hsu WC, Liu TJK. Comparison of 10 nm GAA vs. FinFET 6-T SRAM performance and yield. 於 2014 Silicon Nanoelectronics Workshop, SNW 2014. Institute of Electrical and Electronics Engineers Inc. 2015. 7348585. (2014 Silicon Nanoelectronics Workshop, SNW 2014). https://doi.org/10.1109/SNW.2014.7348585