The NH 3 thermal annealing and decoupled plasma nitridation (DPN) processes are compared for the equivalent oxide thickness (EOT) scaling of atomic-layer-deposited hafnium zirconate (HfZrO 2) gate dielectric. Detailed physical, optical, and electrical characteristics of nitrided HfZrO 2 (HfZrON) film are reported. It is found that DPN can yield a thinner SiO x interfacial layer (IL) (about 0. 12 nm more in terms of EOT scaling) and a more densified HfZrO 2 layer compared to those obtained using NH 3 thermal annealing at a 16% nitrogen dose. NH 3 thermal nitridation causes a large nitrogen distribution tail at the SiO x IL/Si substrate interface and increases leakage current, which suppresses EOT scalability.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials