摘要
The NH 3 thermal annealing and decoupled plasma nitridation (DPN) processes are compared for the equivalent oxide thickness (EOT) scaling of atomic-layer-deposited hafnium zirconate (HfZrO 2) gate dielectric. Detailed physical, optical, and electrical characteristics of nitrided HfZrO 2 (HfZrON) film are reported. It is found that DPN can yield a thinner SiO x interfacial layer (IL) (about 0. 12 nm more in terms of EOT scaling) and a more densified HfZrO 2 layer compared to those obtained using NH 3 thermal annealing at a 16% nitrogen dose. NH 3 thermal nitridation causes a large nitrogen distribution tail at the SiO x IL/Si substrate interface and increases leakage current, which suppresses EOT scalability.
原文 | English |
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頁(從 - 到) | 535-539 |
頁數 | 5 |
期刊 | Electronic Materials Letters |
卷 | 8 |
發行號 | 5 |
DOIs | |
出版狀態 | Published - 2012 10月 |
All Science Journal Classification (ASJC) codes
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