Comparison of equivalent oxide thickness and electrical properties of atomic layer deposited hafnium zirconate dielectrics with thermal or decoupled plasma nitridation process

Chen Kuo Chiang, Chien Hung Wu, Chin Chien Liu, Jin Fu Lin, Chien Lun Yang, Jiun Yuan Wu, Shui Jinn Wang

研究成果: Article

5 引文 斯高帕斯(Scopus)

摘要

The NH 3 thermal annealing and decoupled plasma nitridation (DPN) processes are compared for the equivalent oxide thickness (EOT) scaling of atomic-layer-deposited hafnium zirconate (HfZrO 2) gate dielectric. Detailed physical, optical, and electrical characteristics of nitrided HfZrO 2 (HfZrON) film are reported. It is found that DPN can yield a thinner SiO x interfacial layer (IL) (about 0. 12 nm more in terms of EOT scaling) and a more densified HfZrO 2 layer compared to those obtained using NH 3 thermal annealing at a 16% nitrogen dose. NH 3 thermal nitridation causes a large nitrogen distribution tail at the SiO x IL/Si substrate interface and increases leakage current, which suppresses EOT scalability.

原文English
頁(從 - 到)535-539
頁數5
期刊Electronic Materials Letters
8
發行號5
DOIs
出版狀態Published - 2012 十月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

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