Comparison of InGaP- with AlGaAs-gated low noise PHEMTs by current-dependent hot-electron stresses

H. K. Huang, C. P. Chang, M. P. Houng, Y. H. Wang

研究成果: Conference contribution

摘要

A newly proposed method, called the current-dependent hot-electron stresses, is used to study InGaP-gated and AlGaAs-gated low noise PHEMT devices with different drain currents at high drain voltage. The impact ionization between gate and drain is major mechanism affecting devices during hot-electron stressing, which are excited by the high gate-to-drain electric field. However, the measure of the effects of impact ionization related to the drain current, during the hot-electron stressing, is less discussed in the published literatures. In this work, the designed hot-electron stressed conditions, which are related to the different drain currents are used to demonstrate the influence of drain currents in hot-electron stresses and, furthermore, to estimate and compare InGaP-gated with AlGaAs-gated PHEMTs.

原文English
主出版物標題2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
發行者Institute of Electrical and Electronics Engineers Inc.
頁面199-202
頁數4
ISBN(列印)0780393392, 9780780393394
DOIs
出版狀態Published - 2005 一月 1
事件2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC - Howloon, Hong Kong
持續時間: 2005 十二月 192005 十二月 21

出版系列

名字2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

Other

Other2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
國家Hong Kong
城市Howloon
期間05-12-1905-12-21

指紋

Hot electrons
Drain current
Impact ionization
Electric fields
Electric potential

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

引用此文

Huang, H. K., Chang, C. P., Houng, M. P., & Wang, Y. H. (2005). Comparison of InGaP- with AlGaAs-gated low noise PHEMTs by current-dependent hot-electron stresses. 於 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC (頁 199-202). [1635240] (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2005.1635240
Huang, H. K. ; Chang, C. P. ; Houng, M. P. ; Wang, Y. H. / Comparison of InGaP- with AlGaAs-gated low noise PHEMTs by current-dependent hot-electron stresses. 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. Institute of Electrical and Electronics Engineers Inc., 2005. 頁 199-202 (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC).
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abstract = "A newly proposed method, called the current-dependent hot-electron stresses, is used to study InGaP-gated and AlGaAs-gated low noise PHEMT devices with different drain currents at high drain voltage. The impact ionization between gate and drain is major mechanism affecting devices during hot-electron stressing, which are excited by the high gate-to-drain electric field. However, the measure of the effects of impact ionization related to the drain current, during the hot-electron stressing, is less discussed in the published literatures. In this work, the designed hot-electron stressed conditions, which are related to the different drain currents are used to demonstrate the influence of drain currents in hot-electron stresses and, furthermore, to estimate and compare InGaP-gated with AlGaAs-gated PHEMTs.",
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Huang, HK, Chang, CP, Houng, MP & Wang, YH 2005, Comparison of InGaP- with AlGaAs-gated low noise PHEMTs by current-dependent hot-electron stresses. 於 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC., 1635240, 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC, Institute of Electrical and Electronics Engineers Inc., 頁 199-202, 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC, Howloon, Hong Kong, 05-12-19. https://doi.org/10.1109/EDSSC.2005.1635240

Comparison of InGaP- with AlGaAs-gated low noise PHEMTs by current-dependent hot-electron stresses. / Huang, H. K.; Chang, C. P.; Houng, M. P.; Wang, Y. H.

2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. Institute of Electrical and Electronics Engineers Inc., 2005. p. 199-202 1635240 (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC).

研究成果: Conference contribution

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AB - A newly proposed method, called the current-dependent hot-electron stresses, is used to study InGaP-gated and AlGaAs-gated low noise PHEMT devices with different drain currents at high drain voltage. The impact ionization between gate and drain is major mechanism affecting devices during hot-electron stressing, which are excited by the high gate-to-drain electric field. However, the measure of the effects of impact ionization related to the drain current, during the hot-electron stressing, is less discussed in the published literatures. In this work, the designed hot-electron stressed conditions, which are related to the different drain currents are used to demonstrate the influence of drain currents in hot-electron stresses and, furthermore, to estimate and compare InGaP-gated with AlGaAs-gated PHEMTs.

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Huang HK, Chang CP, Houng MP, Wang YH. Comparison of InGaP- with AlGaAs-gated low noise PHEMTs by current-dependent hot-electron stresses. 於 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. Institute of Electrical and Electronics Engineers Inc. 2005. p. 199-202. 1635240. (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC). https://doi.org/10.1109/EDSSC.2005.1635240