TY - GEN
T1 - Comparison of InGaP- with AlGaAs-gated low noise PHEMTs by current-dependent hot-electron stresses
AU - Huang, H. K.
AU - Chang, C. P.
AU - Houng, M. P.
AU - Wang, Y. H.
PY - 2005/1/1
Y1 - 2005/1/1
N2 - A newly proposed method, called the current-dependent hot-electron stresses, is used to study InGaP-gated and AlGaAs-gated low noise PHEMT devices with different drain currents at high drain voltage. The impact ionization between gate and drain is major mechanism affecting devices during hot-electron stressing, which are excited by the high gate-to-drain electric field. However, the measure of the effects of impact ionization related to the drain current, during the hot-electron stressing, is less discussed in the published literatures. In this work, the designed hot-electron stressed conditions, which are related to the different drain currents are used to demonstrate the influence of drain currents in hot-electron stresses and, furthermore, to estimate and compare InGaP-gated with AlGaAs-gated PHEMTs.
AB - A newly proposed method, called the current-dependent hot-electron stresses, is used to study InGaP-gated and AlGaAs-gated low noise PHEMT devices with different drain currents at high drain voltage. The impact ionization between gate and drain is major mechanism affecting devices during hot-electron stressing, which are excited by the high gate-to-drain electric field. However, the measure of the effects of impact ionization related to the drain current, during the hot-electron stressing, is less discussed in the published literatures. In this work, the designed hot-electron stressed conditions, which are related to the different drain currents are used to demonstrate the influence of drain currents in hot-electron stresses and, furthermore, to estimate and compare InGaP-gated with AlGaAs-gated PHEMTs.
UR - http://www.scopus.com/inward/record.url?scp=43549114009&partnerID=8YFLogxK
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U2 - 10.1109/EDSSC.2005.1635240
DO - 10.1109/EDSSC.2005.1635240
M3 - Conference contribution
SN - 0780393392
SN - 9780780393394
T3 - 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
SP - 199
EP - 202
BT - 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Y2 - 19 December 2005 through 21 December 2005
ER -