Comparison of physical and electrical properties of GZO/ZnO buffer layer and GZO as source and drain electrodes of α-IGZO thin-film transistors

Jia Ling Wu, Han Yu Lin, Bo Yuan Su, Yu Cheng Chen, Sheng-Yuan Chu, Ssu Yin Liu, Chia Chiang Chang, Chin Jyi Wu

研究成果: Article

18 引文 斯高帕斯(Scopus)

摘要

In this research, top-gate bottom-contact thin-film transistors (TFTs) made with amorphous indium gallium zinc oxide (α-IGZO) active layers were grown using the radio-frequency sputtering technique. Two kinds of source and drain (S/D) electrodes, namely bi-layer GZO/100-nm ZnO buffer layer/Corning 1737 and single-layer GZO/Corning 1737, used in the TFT devices and the electric characteristics of the devices were compared. To explain the differences in the TFT performances with these different S/D electrodes, X-ray reflectivity (XRR) and contact angles were measured. The α-IGZO TFT with the bi-layer GZO/100-nm ZnO buffer layer structure as S/D electrodes exhibited superior device performance compared to that of the TFT with a single-layer GZO structure, with a higher thin film density (5.94 g/cm3), lower surface roughness (0.817 nm), and larger surface energy (62.07 mJ/m2) and better adhesion properties of neighboring α-IGZO films. In addition, the mechanisms responsible for the GZO/100-nm ZnO buffer layer/Corning 1737 structure S/D electrodes improving the device characteristics were systematically investigated. The α-IGZO TFT saturation mobility, subthreshold voltage, on/off current ratio, and the trap density of the GZO/100-nm ZnO buffer layer/Corning 1737 S/D electrodes were 13.5 cm2 V-1 S-1, 0.43 V/decade, 3.56 × 107, and 5.65 × 1012 eV-1 cm-2, respectively, indicating the potential of this bi-layer structure to be applied to large-area flat-panel displays.

原文English
頁(從 - 到)35-41
頁數7
期刊Journal of Alloys and Compounds
592
DOIs
出版狀態Published - 2014 四月 15

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

指紋 深入研究「Comparison of physical and electrical properties of GZO/ZnO buffer layer and GZO as source and drain electrodes of α-IGZO thin-film transistors」主題。共同形成了獨特的指紋。

  • 引用此