Comparison of the effect of boron and nitrogen incorporation on the nucleation behavior and electron-field-emission properties of chemical-vapor-deposited diamond films

I. Nan Lin, Kuoguang Perng, Lien Hsin Lee, Chuan Feng Shih, Kuo Shung Liu, Gariant A. Evans, John W. Steeds

研究成果: Review article同行評審

12 引文 斯高帕斯(Scopus)

摘要

Effect of boron (or nitrogen) doping on the nucleation behavior of chemical-vapor-deposited diamond films was investigated. It is observed that inclusion of B(OCH3)3 species in gases markedly enhances, whereas addition of (NH3)2CO species pronouncedly retards the nucleation of diamonds. Raman spectroscopic analyses reveal that the probable mechanism is the formation of boron-carbon clusters due to boron incorporation. While the boron (or nitrogen) species incorporated insignificantly modify the microstructure, these dopants markedly alter the electron-field-emission behavior of the diamond films. The field-emission properties are optimized for films grown with B(OCH3)3=2 sccm [or (NH3)2CO=6 sccm]. The nitrogen-doped films exhibit significantly superior electron-field-emission capacity to the boron-doped films, even though the latter possess much lower electrical resistivity [viz. (Je)n=1020 μ A/cm2, (ρ)n=76 mΩ cm and (Je)b=360 μ A/cm2, (ρ)b=2.1 mΩ cm].

原文English
頁(從 - 到)1277-1279
頁數3
期刊Applied Physics Letters
77
發行號9
DOIs
出版狀態Published - 2000 八月 28

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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