Comparison of the trap behavior between ZrO2 and HfO2 gate stack nMOSFETs by 1/f noise and random telegraph noise
Bo Chin Wang, San Lein Wu, Yu Ying Lu, Shoou Jinn Chang, Jone Fang Chen, Shih Chang Tsai, Che Hua Hsu, Chih Wei Yang, Cheng Guo Chen, Osbert Cheng, Po Chin Huang
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斯高帕斯（Scopus）