Comparison on the effect of (La0.5Sr0.5)MnO3 and (La0.5Sr0.5)CoO3 buffer layers on fatigue properties of (Pb0.6Sr0.4)TiO3 thin films prepared by pulsed laser deposition

Hsiu Fung Cheng; Yi Chun Chen; Chen Chia Chou; Kuang Chung Chang; Chun Shu Hou; I. Nan Lin

doi:10.1063/1.373598

Comparison on the effect of (La_0.5Sr_0.5)MnO₃ and (La_0.5Sr_0.5)CoO₃ buffer layers on fatigue properties of (Pb_0.6Sr_0.4)TiO₃ thin films prepared by pulsed laser deposition

Hsiu Fung Cheng, Yi Chun Chen, Chen Chia Chou, Kuang Chung Chang, Chun Shu Hou, I. Nan Lin

物理學系

研究成果: Article › 同行評審

15 引文斯高帕斯（Scopus）

摘要

The fatigue properties of (Pb_0.6Sr_0.4)TiO₃ (PSrTO) thin films deposited using (La_0.5Sr_0.5)MnO₃ (LSMO) materials as buffer layer were compared with those of the films grown using (La_0.5Sr_0.5)CoO₃ (LSCO) materials as buffer layer. The extent of degradation induced by polarization switching for 1 × 10¹⁰ cycles with 210 kV/cm maximum field, which is four times of coercive field (E_c), is less pronounced for PSrTO/LSMO/Pt(Si) thin films than that for PSrTO/ LSCOTPt(Si) films. This phenomenon is ascribed to the smaller strain induced in PSrTO/LSMO/ Pt(Si) materials. Moreover, the pulse response testing indicates that the degradation of the films mainly occurs at PSrTO-to-LSMO (or PSrTO-to-LSCO) interface.

原文	English
頁（從 - 到）	8695-8699
頁數	5
期刊	Journal of Applied Physics
卷	87
發行號	12
DOIs	https://doi.org/10.1063/1.373598
出版狀態	Published - 2000 6月 15

All Science Journal Classification (ASJC) codes

一般物理與天文學

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10.1063/1.373598

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title = "Comparison on the effect of (La0.5Sr0.5)MnO3 and (La0.5Sr0.5)CoO3 buffer layers on fatigue properties of (Pb0.6Sr0.4)TiO3 thin films prepared by pulsed laser deposition",

abstract = "The fatigue properties of (Pb0.6Sr0.4)TiO3 (PSrTO) thin films deposited using (La0.5Sr0.5)MnO3 (LSMO) materials as buffer layer were compared with those of the films grown using (La0.5Sr0.5)CoO3 (LSCO) materials as buffer layer. The extent of degradation induced by polarization switching for 1 × 1010 cycles with 210 kV/cm maximum field, which is four times of coercive field (Ec), is less pronounced for PSrTO/LSMO/Pt(Si) thin films than that for PSrTO/ LSCOTPt(Si) films. This phenomenon is ascribed to the smaller strain induced in PSrTO/LSMO/ Pt(Si) materials. Moreover, the pulse response testing indicates that the degradation of the films mainly occurs at PSrTO-to-LSMO (or PSrTO-to-LSCO) interface.",

author = "Cheng, {Hsiu Fung} and Chen, {Yi Chun} and Chou, {Chen Chia} and Chang, {Kuang Chung} and Hou, {Chun Shu} and Lin, {I. Nan}",

year = "2000",

month = jun,

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doi = "10.1063/1.373598",

language = "English",

volume = "87",

pages = "8695--8699",

journal = "Journal of Applied Physics",

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T1 - Comparison on the effect of (La0.5Sr0.5)MnO3 and (La0.5Sr0.5)CoO3 buffer layers on fatigue properties of (Pb0.6Sr0.4)TiO3 thin films prepared by pulsed laser deposition

AU - Cheng, Hsiu Fung

AU - Chen, Yi Chun

AU - Chou, Chen Chia

AU - Chang, Kuang Chung

AU - Hou, Chun Shu

AU - Lin, I. Nan

PY - 2000/6/15

Y1 - 2000/6/15

N2 - The fatigue properties of (Pb0.6Sr0.4)TiO3 (PSrTO) thin films deposited using (La0.5Sr0.5)MnO3 (LSMO) materials as buffer layer were compared with those of the films grown using (La0.5Sr0.5)CoO3 (LSCO) materials as buffer layer. The extent of degradation induced by polarization switching for 1 × 1010 cycles with 210 kV/cm maximum field, which is four times of coercive field (Ec), is less pronounced for PSrTO/LSMO/Pt(Si) thin films than that for PSrTO/ LSCOTPt(Si) films. This phenomenon is ascribed to the smaller strain induced in PSrTO/LSMO/ Pt(Si) materials. Moreover, the pulse response testing indicates that the degradation of the films mainly occurs at PSrTO-to-LSMO (or PSrTO-to-LSCO) interface.

AB - The fatigue properties of (Pb0.6Sr0.4)TiO3 (PSrTO) thin films deposited using (La0.5Sr0.5)MnO3 (LSMO) materials as buffer layer were compared with those of the films grown using (La0.5Sr0.5)CoO3 (LSCO) materials as buffer layer. The extent of degradation induced by polarization switching for 1 × 1010 cycles with 210 kV/cm maximum field, which is four times of coercive field (Ec), is less pronounced for PSrTO/LSMO/Pt(Si) thin films than that for PSrTO/ LSCOTPt(Si) films. This phenomenon is ascribed to the smaller strain induced in PSrTO/LSMO/ Pt(Si) materials. Moreover, the pulse response testing indicates that the degradation of the films mainly occurs at PSrTO-to-LSMO (or PSrTO-to-LSCO) interface.

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Comparison on the effect of (La0.5Sr0.5)MnO3 and (La0.5Sr0.5)CoO3 buffer layers on fatigue properties of (Pb0.6Sr0.4)TiO3 thin films prepared by pulsed laser deposition

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Comparison on the effect of (La_0.5Sr_0.5)MnO₃ and (La_0.5Sr_0.5)CoO₃ buffer layers on fatigue properties of (Pb_0.6Sr_0.4)TiO₃ thin films prepared by pulsed laser deposition