Comparison studies of InGaN epitaxy with trimethylgallium and triethylgallium for photosensors application

Kai Hsuan Lee, Ping Chuan Chang, Shoou-Jinn Chang, Yan Kuin Su, San Lein Wu, Manfred Pilkuhn

研究成果: Article

3 引文 (Scopus)

摘要

InGaN materials grown by metalorganic chemical vapor deposition (MOCVD) using trimethylgallium (TMG) and triethylgallium (TEG) as alkyl source were compared. Ga-doped ZnO (GZO) films using radio frequency (RF) magnetron sputtering to feature Schottky contacts onto InGaN epitaxial layer with AlN or Mg-doped GaN in-situ capping layer were demonstrated. It is of great potential in application to high performance InGaN photosensors.

原文English
頁(從 - 到)899-904
頁數6
期刊Materials Chemistry and Physics
134
發行號2-3
DOIs
出版狀態Published - 2012 六月 15

指紋

photosensors
Epitaxial layers
Metallorganic chemical vapor deposition
Epitaxial growth
Magnetron sputtering
epitaxy
metalorganic chemical vapor deposition
electric contacts
radio frequencies
magnetron sputtering

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

引用此文

Lee, Kai Hsuan ; Chang, Ping Chuan ; Chang, Shoou-Jinn ; Su, Yan Kuin ; Wu, San Lein ; Pilkuhn, Manfred. / Comparison studies of InGaN epitaxy with trimethylgallium and triethylgallium for photosensors application. 於: Materials Chemistry and Physics. 2012 ; 卷 134, 編號 2-3. 頁 899-904.
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Comparison studies of InGaN epitaxy with trimethylgallium and triethylgallium for photosensors application. / Lee, Kai Hsuan; Chang, Ping Chuan; Chang, Shoou-Jinn; Su, Yan Kuin; Wu, San Lein; Pilkuhn, Manfred.

於: Materials Chemistry and Physics, 卷 134, 編號 2-3, 15.06.2012, p. 899-904.

研究成果: Article

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AU - Wu, San Lein

AU - Pilkuhn, Manfred

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