Comparison studies of InGaN epitaxy with trimethylgallium and triethylgallium for photosensors application

Kai Hsuan Lee; Ping Chuan Chang; Shoou Jinn Chang; Yan Kuin Su; San Lein Wu; Manfred Pilkuhn

doi:10.1016/j.matchemphys.2012.03.087

Comparison studies of InGaN epitaxy with trimethylgallium and triethylgallium for photosensors application

Kai Hsuan Lee, Ping Chuan Chang, Shoou Jinn Chang, Yan Kuin Su, San Lein Wu, Manfred Pilkuhn

微電子工程研究所

研究成果: Article › 同行評審

7 引文斯高帕斯（Scopus）

摘要

InGaN materials grown by metalorganic chemical vapor deposition (MOCVD) using trimethylgallium (TMG) and triethylgallium (TEG) as alkyl source were compared. Ga-doped ZnO (GZO) films using radio frequency (RF) magnetron sputtering to feature Schottky contacts onto InGaN epitaxial layer with AlN or Mg-doped GaN in-situ capping layer were demonstrated. It is of great potential in application to high performance InGaN photosensors.

原文	English
頁（從 - 到）	899-904
頁數	6
期刊	Materials Chemistry and Physics
卷	134
發行號	2-3
DOIs	https://doi.org/10.1016/j.matchemphys.2012.03.087
出版狀態	Published - 2012 6月 15

All Science Journal Classification (ASJC) codes

一般材料科學
凝聚態物理學

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10.1016/j.matchemphys.2012.03.087

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title = "Comparison studies of InGaN epitaxy with trimethylgallium and triethylgallium for photosensors application",

abstract = "InGaN materials grown by metalorganic chemical vapor deposition (MOCVD) using trimethylgallium (TMG) and triethylgallium (TEG) as alkyl source were compared. Ga-doped ZnO (GZO) films using radio frequency (RF) magnetron sputtering to feature Schottky contacts onto InGaN epitaxial layer with AlN or Mg-doped GaN in-situ capping layer were demonstrated. It is of great potential in application to high performance InGaN photosensors.",

author = "Lee, {Kai Hsuan} and Chang, {Ping Chuan} and Chang, {Shoou Jinn} and Su, {Yan Kuin} and Wu, {San Lein} and Manfred Pilkuhn",

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doi = "10.1016/j.matchemphys.2012.03.087",

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AU - Lee, Kai Hsuan

AU - Chang, Ping Chuan

AU - Chang, Shoou Jinn

AU - Su, Yan Kuin

AU - Wu, San Lein

AU - Pilkuhn, Manfred

PY - 2012/6/15

Y1 - 2012/6/15

N2 - InGaN materials grown by metalorganic chemical vapor deposition (MOCVD) using trimethylgallium (TMG) and triethylgallium (TEG) as alkyl source were compared. Ga-doped ZnO (GZO) films using radio frequency (RF) magnetron sputtering to feature Schottky contacts onto InGaN epitaxial layer with AlN or Mg-doped GaN in-situ capping layer were demonstrated. It is of great potential in application to high performance InGaN photosensors.

AB - InGaN materials grown by metalorganic chemical vapor deposition (MOCVD) using trimethylgallium (TMG) and triethylgallium (TEG) as alkyl source were compared. Ga-doped ZnO (GZO) films using radio frequency (RF) magnetron sputtering to feature Schottky contacts onto InGaN epitaxial layer with AlN or Mg-doped GaN in-situ capping layer were demonstrated. It is of great potential in application to high performance InGaN photosensors.

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JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

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ER -

Comparison studies of InGaN epitaxy with trimethylgallium and triethylgallium for photosensors application

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