Composite HfO 2 /Al 2 O 3 -dielectric MOS-HEMTs by using RF sputtering/ozone water oxidation

Ching Sung Lee, Hung Shi Huang, Wei Hsin Shung, Ting Ting Wu, Cheng Lung Yang, Chuan Chung Yeh, Yu Hao Liao, Bo Yi Chou, Han Yin Liu, Wei-Chou Hsu

研究成果: Conference contribution

摘要

Enhanced device characteristics of InGaAs/AlGaAs MOS-HEMTs with HfO 2 /Al 2 O 3 stacked dielectrics by separately using RF sputtering and ozone water oxidization are investigated in this work. Improved interfacial quality is verified by the measured 1/f spectra and C-V characteristics. k values of the HfO 2 /Al 2 O 3 dielectrics are extracted to be 21.5/9.2, respectively. The effective oxide thickness (EOT) is 5.15 nm. The present MOS-HEMT has shown comprehensive improvements in intrinsic voltage gain (A V ) and high-frequency performances. The present MOS-HEMT design is promising for MMIC applications.

原文English
主出版物標題Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014
編輯Xiaohong Jiang, Shaozi Li, Yun Cheng, Ying Dai
發行者Institute of Electrical and Electronics Engineers Inc.
頁面769-771
頁數3
ISBN(電子)9781479931965
DOIs
出版狀態Published - 2014 十一月 5
事件2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014 - Sapporo City, Hokkaido, Japan
持續時間: 2014 四月 262014 四月 28

出版系列

名字Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014
2

Other

Other2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014
國家Japan
城市Sapporo City, Hokkaido
期間14-04-2614-04-28

指紋

High electron mobility transistors
Ozone
Sputtering
Oxidation
Composite materials
Water
Monolithic microwave integrated circuits
Oxides
Electric potential

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

引用此文

Lee, C. S., Huang, H. S., Shung, W. H., Wu, T. T., Yang, C. L., Yeh, C. C., ... Hsu, W-C. (2014). Composite HfO 2 /Al 2 O 3 -dielectric MOS-HEMTs by using RF sputtering/ozone water oxidation 於 X. Jiang, S. Li, Y. Cheng, & Y. Dai (編輯), Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014 (頁 769-771). [6947770] (Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014; 卷 2). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/InfoSEEE.2014.6947770
Lee, Ching Sung ; Huang, Hung Shi ; Shung, Wei Hsin ; Wu, Ting Ting ; Yang, Cheng Lung ; Yeh, Chuan Chung ; Liao, Yu Hao ; Chou, Bo Yi ; Liu, Han Yin ; Hsu, Wei-Chou. / Composite HfO 2 /Al 2 O 3 -dielectric MOS-HEMTs by using RF sputtering/ozone water oxidation Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014. 編輯 / Xiaohong Jiang ; Shaozi Li ; Yun Cheng ; Ying Dai. Institute of Electrical and Electronics Engineers Inc., 2014. 頁 769-771 (Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014).
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abstract = "Enhanced device characteristics of InGaAs/AlGaAs MOS-HEMTs with HfO 2 /Al 2 O 3 stacked dielectrics by separately using RF sputtering and ozone water oxidization are investigated in this work. Improved interfacial quality is verified by the measured 1/f spectra and C-V characteristics. k values of the HfO 2 /Al 2 O 3 dielectrics are extracted to be 21.5/9.2, respectively. The effective oxide thickness (EOT) is 5.15 nm. The present MOS-HEMT has shown comprehensive improvements in intrinsic voltage gain (A V ) and high-frequency performances. The present MOS-HEMT design is promising for MMIC applications.",
author = "Lee, {Ching Sung} and Huang, {Hung Shi} and Shung, {Wei Hsin} and Wu, {Ting Ting} and Yang, {Cheng Lung} and Yeh, {Chuan Chung} and Liao, {Yu Hao} and Chou, {Bo Yi} and Liu, {Han Yin} and Wei-Chou Hsu",
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Lee, CS, Huang, HS, Shung, WH, Wu, TT, Yang, CL, Yeh, CC, Liao, YH, Chou, BY, Liu, HY & Hsu, W-C 2014, Composite HfO 2 /Al 2 O 3 -dielectric MOS-HEMTs by using RF sputtering/ozone water oxidation 於 X Jiang, S Li, Y Cheng & Y Dai (編輯), Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014., 6947770, Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014, 卷 2, Institute of Electrical and Electronics Engineers Inc., 頁 769-771, 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014, Sapporo City, Hokkaido, Japan, 14-04-26. https://doi.org/10.1109/InfoSEEE.2014.6947770

Composite HfO 2 /Al 2 O 3 -dielectric MOS-HEMTs by using RF sputtering/ozone water oxidation . / Lee, Ching Sung; Huang, Hung Shi; Shung, Wei Hsin; Wu, Ting Ting; Yang, Cheng Lung; Yeh, Chuan Chung; Liao, Yu Hao; Chou, Bo Yi; Liu, Han Yin; Hsu, Wei-Chou.

Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014. 編輯 / Xiaohong Jiang; Shaozi Li; Yun Cheng; Ying Dai. Institute of Electrical and Electronics Engineers Inc., 2014. p. 769-771 6947770 (Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014; 卷 2).

研究成果: Conference contribution

TY - GEN

T1 - Composite HfO 2 /Al 2 O 3 -dielectric MOS-HEMTs by using RF sputtering/ozone water oxidation

AU - Lee, Ching Sung

AU - Huang, Hung Shi

AU - Shung, Wei Hsin

AU - Wu, Ting Ting

AU - Yang, Cheng Lung

AU - Yeh, Chuan Chung

AU - Liao, Yu Hao

AU - Chou, Bo Yi

AU - Liu, Han Yin

AU - Hsu, Wei-Chou

PY - 2014/11/5

Y1 - 2014/11/5

N2 - Enhanced device characteristics of InGaAs/AlGaAs MOS-HEMTs with HfO 2 /Al 2 O 3 stacked dielectrics by separately using RF sputtering and ozone water oxidization are investigated in this work. Improved interfacial quality is verified by the measured 1/f spectra and C-V characteristics. k values of the HfO 2 /Al 2 O 3 dielectrics are extracted to be 21.5/9.2, respectively. The effective oxide thickness (EOT) is 5.15 nm. The present MOS-HEMT has shown comprehensive improvements in intrinsic voltage gain (A V ) and high-frequency performances. The present MOS-HEMT design is promising for MMIC applications.

AB - Enhanced device characteristics of InGaAs/AlGaAs MOS-HEMTs with HfO 2 /Al 2 O 3 stacked dielectrics by separately using RF sputtering and ozone water oxidization are investigated in this work. Improved interfacial quality is verified by the measured 1/f spectra and C-V characteristics. k values of the HfO 2 /Al 2 O 3 dielectrics are extracted to be 21.5/9.2, respectively. The effective oxide thickness (EOT) is 5.15 nm. The present MOS-HEMT has shown comprehensive improvements in intrinsic voltage gain (A V ) and high-frequency performances. The present MOS-HEMT design is promising for MMIC applications.

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M3 - Conference contribution

AN - SCOPUS:84913527106

T3 - Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014

SP - 769

EP - 771

BT - Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014

A2 - Jiang, Xiaohong

A2 - Li, Shaozi

A2 - Cheng, Yun

A2 - Dai, Ying

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Lee CS, Huang HS, Shung WH, Wu TT, Yang CL, Yeh CC 等. Composite HfO 2 /Al 2 O 3 -dielectric MOS-HEMTs by using RF sputtering/ozone water oxidation 於 Jiang X, Li S, Cheng Y, Dai Y, 編輯, Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 769-771. 6947770. (Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014). https://doi.org/10.1109/InfoSEEE.2014.6947770