Composite HfO 2 /Al 2 O 3 -dielectric MOS-HEMTs by using RF sputtering/ozone water oxidation

Ching Sung Lee, Hung Shi Huang, Wei Hsin Shung, Ting Ting Wu, Cheng Lung Yang, Chuan Chung Yeh, Yu Hao Liao, Bo Yi Chou, Han Yin Liu, Wei-Chou Hsu

研究成果: Conference contribution

摘要

Enhanced device characteristics of InGaAs/AlGaAs MOS-HEMTs with HfO 2 /Al 2 O 3 stacked dielectrics by separately using RF sputtering and ozone water oxidization are investigated in this work. Improved interfacial quality is verified by the measured 1/f spectra and C-V characteristics. k values of the HfO 2 /Al 2 O 3 dielectrics are extracted to be 21.5/9.2, respectively. The effective oxide thickness (EOT) is 5.15 nm. The present MOS-HEMT has shown comprehensive improvements in intrinsic voltage gain (A V ) and high-frequency performances. The present MOS-HEMT design is promising for MMIC applications.

原文English
主出版物標題Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014
編輯Xiaohong Jiang, Shaozi Li, Yun Cheng, Ying Dai
發行者Institute of Electrical and Electronics Engineers Inc.
頁面769-771
頁數3
ISBN(電子)9781479931965
DOIs
出版狀態Published - 2014 十一月 5
事件2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014 - Sapporo City, Hokkaido, Japan
持續時間: 2014 四月 262014 四月 28

出版系列

名字Proceedings - 2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014
2

Other

Other2014 International Conference on Information Science, Electronics and Electrical Engineering, ISEEE 2014
國家Japan
城市Sapporo City, Hokkaido
期間14-04-2614-04-28

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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