Composite HfO2/Al2O3-dielectric AlGaAs/InGaAs MOS-HEMTs by using RF sputtering/ozone water oxidation

Ching Sung Lee, Yu Hao Liao, Bo Yi Chou, Han Yin Liu, Wei-Chou Hsu

研究成果: Article

3 引文 (Scopus)

摘要

Composite HfO2/Al2O3-dielectric In 0.2Ga0.8As/Al0.24Ga0.76As metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) by using RF sputtering/ozone water oxidization, respectively, are investigated. In comparison with a conventional Schottky-gate device on the same epitaxial structure, an Al2O3 liner was chemically formed for the present MOS-HEMT to improve interfacial quality and decrease gate leakages. Moreover, a high-k HfO2 layer was further deposited on the Al 2O3 liner to enhance the gate modulation capability. The present MOS-HEMT with the devised HfO2/Al2O3 dielectric stack has demonstrated excellent switching characteristics, including superior subthreshold slope (S.S.) of 70 mV/dec and high drain-source current (IDS) on-off ratio of up to 6 orders. Improved direct-current (DC), radio-frequency (RF), and high-temperature device performances of the present design are also comprehensively studied in this work.

原文English
頁(從 - 到)194-203
頁數10
期刊Superlattices and Microstructures
72
DOIs
出版狀態Published - 2014 一月 1

指紋

Ozone
High electron mobility transistors
high electron mobility transistors
metal oxide semiconductors
ozone
Sputtering
aluminum gallium arsenides
radio frequencies
sputtering
Metals
linings
Oxidation
oxidation
composite materials
Water
Composite materials
water
leakage
direct current
Modulation

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Materials Science(all)

引用此文

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abstract = "Composite HfO2/Al2O3-dielectric In 0.2Ga0.8As/Al0.24Ga0.76As metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) by using RF sputtering/ozone water oxidization, respectively, are investigated. In comparison with a conventional Schottky-gate device on the same epitaxial structure, an Al2O3 liner was chemically formed for the present MOS-HEMT to improve interfacial quality and decrease gate leakages. Moreover, a high-k HfO2 layer was further deposited on the Al 2O3 liner to enhance the gate modulation capability. The present MOS-HEMT with the devised HfO2/Al2O3 dielectric stack has demonstrated excellent switching characteristics, including superior subthreshold slope (S.S.) of 70 mV/dec and high drain-source current (IDS) on-off ratio of up to 6 orders. Improved direct-current (DC), radio-frequency (RF), and high-temperature device performances of the present design are also comprehensively studied in this work.",
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Composite HfO2/Al2O3-dielectric AlGaAs/InGaAs MOS-HEMTs by using RF sputtering/ozone water oxidation. / Lee, Ching Sung; Liao, Yu Hao; Chou, Bo Yi; Liu, Han Yin; Hsu, Wei-Chou.

於: Superlattices and Microstructures, 卷 72, 01.01.2014, p. 194-203.

研究成果: Article

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AU - Liao, Yu Hao

AU - Chou, Bo Yi

AU - Liu, Han Yin

AU - Hsu, Wei-Chou

PY - 2014/1/1

Y1 - 2014/1/1

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AB - Composite HfO2/Al2O3-dielectric In 0.2Ga0.8As/Al0.24Ga0.76As metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) by using RF sputtering/ozone water oxidization, respectively, are investigated. In comparison with a conventional Schottky-gate device on the same epitaxial structure, an Al2O3 liner was chemically formed for the present MOS-HEMT to improve interfacial quality and decrease gate leakages. Moreover, a high-k HfO2 layer was further deposited on the Al 2O3 liner to enhance the gate modulation capability. The present MOS-HEMT with the devised HfO2/Al2O3 dielectric stack has demonstrated excellent switching characteristics, including superior subthreshold slope (S.S.) of 70 mV/dec and high drain-source current (IDS) on-off ratio of up to 6 orders. Improved direct-current (DC), radio-frequency (RF), and high-temperature device performances of the present design are also comprehensively studied in this work.

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