Comprehensive characterization of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with TiO2 gate dielectric

Yu Shyan Lin, Chi Che Lu, Wei Chou Hsu

研究成果: Article

1 引文 (Scopus)

摘要

AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMTs) on Si substrates with TiO2 gate dielectrics are fabricated. The dc and power characteristics of AlGaN/GaN MOS-HEMTs are compared with that of metal-gate HEMTs fabricated on the same material. The gate leakage current for the MOS-HFET is more than two orders of magnitude smaller than for the HEMT at 300 K. The high-speed performance potential of the MOS-HEMT with an fT = 10.44 GHz and an fmax = 13.8 GHz is confirmed. The MOS-HEMT shows higher extrinsic transconductance, breakdown voltage, high-frequency and power characteristics relative to the HEMT. Furthermore, experimental results reveal that this studied MOS-HEMT is feasible for use at high temperatures.

原文English
文章編號1600227
期刊Physica Status Solidi (C) Current Topics in Solid State Physics
14
發行號1-2
DOIs
出版狀態Published - 2017 一月 1

指紋

high electron mobility transistors
metal oxide semiconductors
transconductance
electrical faults
leakage
high speed
metals

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

引用此文

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abstract = "AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMTs) on Si substrates with TiO2 gate dielectrics are fabricated. The dc and power characteristics of AlGaN/GaN MOS-HEMTs are compared with that of metal-gate HEMTs fabricated on the same material. The gate leakage current for the MOS-HFET is more than two orders of magnitude smaller than for the HEMT at 300 K. The high-speed performance potential of the MOS-HEMT with an fT = 10.44 GHz and an fmax = 13.8 GHz is confirmed. The MOS-HEMT shows higher extrinsic transconductance, breakdown voltage, high-frequency and power characteristics relative to the HEMT. Furthermore, experimental results reveal that this studied MOS-HEMT is feasible for use at high temperatures.",
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T1 - Comprehensive characterization of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with TiO2 gate dielectric

AU - Lin, Yu Shyan

AU - Lu, Chi Che

AU - Hsu, Wei Chou

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Y1 - 2017/1/1

N2 - AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMTs) on Si substrates with TiO2 gate dielectrics are fabricated. The dc and power characteristics of AlGaN/GaN MOS-HEMTs are compared with that of metal-gate HEMTs fabricated on the same material. The gate leakage current for the MOS-HFET is more than two orders of magnitude smaller than for the HEMT at 300 K. The high-speed performance potential of the MOS-HEMT with an fT = 10.44 GHz and an fmax = 13.8 GHz is confirmed. The MOS-HEMT shows higher extrinsic transconductance, breakdown voltage, high-frequency and power characteristics relative to the HEMT. Furthermore, experimental results reveal that this studied MOS-HEMT is feasible for use at high temperatures.

AB - AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMTs) on Si substrates with TiO2 gate dielectrics are fabricated. The dc and power characteristics of AlGaN/GaN MOS-HEMTs are compared with that of metal-gate HEMTs fabricated on the same material. The gate leakage current for the MOS-HFET is more than two orders of magnitude smaller than for the HEMT at 300 K. The high-speed performance potential of the MOS-HEMT with an fT = 10.44 GHz and an fmax = 13.8 GHz is confirmed. The MOS-HEMT shows higher extrinsic transconductance, breakdown voltage, high-frequency and power characteristics relative to the HEMT. Furthermore, experimental results reveal that this studied MOS-HEMT is feasible for use at high temperatures.

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