Comprehensive investigation of hydrogen-sensing properties of Pt/InAlP-based Schottky diodes

Yan Ying Tsai, Ching Wen Hung, Ssu I. Fu, Po Hsien Lai, Hung Chi Chang, Huey Ing Chen, Wen Chau Liu

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)


Interesting hydrogen-sensing properties of catalytic Pt/In0.5Al0.5P metal-oxide-semiconductor (MOS) and metal-semiconductor (MS) Schottky diodes are comprehensively studied and compared. The effects of hydrogen adsorption are investigated on the device performance such as the current-voltage characteristics, relative sensitivity ratio, Schottky barrier height variation, and built-in electric field. Experimentally, both the hydrogen sensors can be operated systematically under bi-polarity biases. The detecting sensitivity of the MOS-type hydrogen sensor is superior to that of the MS-type. It is believed that a high-quality oxide layer effectively increases the amount of hydrogen atoms adsorbed. Also, the hydrogen effects are found on both the Schottky barrier height lowering and the modulation in the electric field at the Pt-oxide and Pt-InAlP interfaces. In addition, the influence of the oxygen partial pressure in synthetic air and the existence of an oxygen layer between the Pt metal and the InAlP material are also studied.

頁(從 - 到)535-541
期刊Sensors and Actuators, B: Chemical
出版狀態Published - 2007 6月 26

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 儀器
  • 凝聚態物理學
  • 表面、塗料和薄膜
  • 金屬和合金
  • 電氣與電子工程
  • 材料化學


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