TY - JOUR
T1 - Comprehensive investigation of hydrogen-sensing properties of Pt/InAlP-based Schottky diodes
AU - Tsai, Yan Ying
AU - Hung, Ching Wen
AU - Fu, Ssu I.
AU - Lai, Po Hsien
AU - Chang, Hung Chi
AU - Chen, Huey Ing
AU - Liu, Wen Chau
N1 - Funding Information:
A part of this work was supported by the National Science Council of the Republic of China under Contract No. NSC 93-2215-E-006-002. Also, this work made use of Shared Facilities supported by the Program of Top 100 Universities Advancement, Ministry of Education, Taiwan.
PY - 2007/6/26
Y1 - 2007/6/26
N2 - Interesting hydrogen-sensing properties of catalytic Pt/In0.5Al0.5P metal-oxide-semiconductor (MOS) and metal-semiconductor (MS) Schottky diodes are comprehensively studied and compared. The effects of hydrogen adsorption are investigated on the device performance such as the current-voltage characteristics, relative sensitivity ratio, Schottky barrier height variation, and built-in electric field. Experimentally, both the hydrogen sensors can be operated systematically under bi-polarity biases. The detecting sensitivity of the MOS-type hydrogen sensor is superior to that of the MS-type. It is believed that a high-quality oxide layer effectively increases the amount of hydrogen atoms adsorbed. Also, the hydrogen effects are found on both the Schottky barrier height lowering and the modulation in the electric field at the Pt-oxide and Pt-InAlP interfaces. In addition, the influence of the oxygen partial pressure in synthetic air and the existence of an oxygen layer between the Pt metal and the InAlP material are also studied.
AB - Interesting hydrogen-sensing properties of catalytic Pt/In0.5Al0.5P metal-oxide-semiconductor (MOS) and metal-semiconductor (MS) Schottky diodes are comprehensively studied and compared. The effects of hydrogen adsorption are investigated on the device performance such as the current-voltage characteristics, relative sensitivity ratio, Schottky barrier height variation, and built-in electric field. Experimentally, both the hydrogen sensors can be operated systematically under bi-polarity biases. The detecting sensitivity of the MOS-type hydrogen sensor is superior to that of the MS-type. It is believed that a high-quality oxide layer effectively increases the amount of hydrogen atoms adsorbed. Also, the hydrogen effects are found on both the Schottky barrier height lowering and the modulation in the electric field at the Pt-oxide and Pt-InAlP interfaces. In addition, the influence of the oxygen partial pressure in synthetic air and the existence of an oxygen layer between the Pt metal and the InAlP material are also studied.
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U2 - 10.1016/j.snb.2007.01.017
DO - 10.1016/j.snb.2007.01.017
M3 - Article
AN - SCOPUS:34249869537
VL - 124
SP - 535
EP - 541
JO - Sensors and Actuators B: Chemical
JF - Sensors and Actuators B: Chemical
SN - 0925-4005
IS - 2
ER -