Comprehensive study of thermal stability performance of metamorphic heterostructure field-effect transistors with TiAu and Au metal gates

Po Hsien Lai, Rong Chau Liu, Ssu I. Fu, Yan Ying Tsai, Ching Wen Hung, Tzu Pin Chen, Chun Wei Chen, Wen Chau Liu

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

The thermal stability performance of double δ -doped In0.42 Al0.58 As In0.46 Ga0.54 As metamorphic heterostructure field-effect transistors with Au and TiAu metal gates are comprehensively studied and demonstrated. By evaporating the TiAu metal gate, the thermal stability of device characteristics are significantly improved as compared with the device with conventional metal gate (Au). Experimentally, the device with a TiAu metal gate simultaneously exhibits the considerably lower temperature degradation in turn-on voltage (-2.19 mVK), breakdown voltage (-34 mVK), logic swing (-1.24 mVK), transition region width (0.05 mVK), on-off current ratio (-3.55 K), threshold voltage (-0.25 mVK), impact ionization-induced gate current (1.63× 10-3 μAmm K), output conductance (1.23 μSmm K), and voltage gain (-0.33 K) as the temperature is increased from 300 to 510 K. Consequently, the studied device with a TiAu metal gate is a good candidate for high-speed and high-temperature digital and switching circuit applications.

原文English
頁(從 - 到)H205-H209
期刊Journal of the Electrochemical Society
154
發行號3
DOIs
出版狀態Published - 2007

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 可再生能源、永續發展與環境
  • 表面、塗料和薄膜
  • 電化學
  • 材料化學

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