TY - JOUR
T1 - Comprehensive temperature-dependent studies of metamorphic high electron mobility transistors with double and single δ-doped structures
AU - Huang, Chien Chang
AU - Chen, Tai You
AU - Hsu, Chi Shiang
AU - Chen, Chun Chia
AU - Kao, Chung I.
AU - Liu, Wen Chau
N1 - Funding Information:
Manuscript received February 23, 2011; revised July 13, 2011; accepted August 30, 2011. Date of publication October 6, 2011; date of current version November 23, 2011. This work was supported in part by the National Science Council of the Republic of China under Contract NSC-97-2221-E-006-238-MY3. The review of this paper was arranged by Editor S. Bandyopadhyay.
PY - 2011/12
Y1 - 2011/12
N2 - The temperature-dependent characteristics of metamorphic high electron mobility transistors (MHEMTs) with double and single δ-doped structure are studied and demonstrated. Due to the use of double δ-doped sheets, the current density in the channel layer and two-dimensional electron gas could effectively be increased. The excellent turn-on voltage of 1.18 (0.80) V, maximum drain saturation current of 544 (524) mA/mm, maximum extrinsic transconductance of 361 (312) mS/mm, unity current gain cutoff frequency of 55.06 GHz, and maximum oscillation frequency of 129.17 GHz are obtained at 300 (510) K for a 0.6 × 100 μm2 gate dimension double δ -doped MHEMT. In addition, using wide-bandgap InAlAs Schottky, spacer, and buffer layers, the carrier confinement could significantly be improved at high temperature. Therefore, excellent thermal stability is achieved for double δ-doped MHEMT. The device with a double δ-doped structure exhibits a considerably low temperature coefficient on threshold voltage (∂V th/∂T) of 0.06 mV/K when the temperature is increased from 330 to 510 K, which is superior to previous reports of related high electron mobility transistors.
AB - The temperature-dependent characteristics of metamorphic high electron mobility transistors (MHEMTs) with double and single δ-doped structure are studied and demonstrated. Due to the use of double δ-doped sheets, the current density in the channel layer and two-dimensional electron gas could effectively be increased. The excellent turn-on voltage of 1.18 (0.80) V, maximum drain saturation current of 544 (524) mA/mm, maximum extrinsic transconductance of 361 (312) mS/mm, unity current gain cutoff frequency of 55.06 GHz, and maximum oscillation frequency of 129.17 GHz are obtained at 300 (510) K for a 0.6 × 100 μm2 gate dimension double δ -doped MHEMT. In addition, using wide-bandgap InAlAs Schottky, spacer, and buffer layers, the carrier confinement could significantly be improved at high temperature. Therefore, excellent thermal stability is achieved for double δ-doped MHEMT. The device with a double δ-doped structure exhibits a considerably low temperature coefficient on threshold voltage (∂V th/∂T) of 0.06 mV/K when the temperature is increased from 330 to 510 K, which is superior to previous reports of related high electron mobility transistors.
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U2 - 10.1109/TED.2011.2167625
DO - 10.1109/TED.2011.2167625
M3 - Article
AN - SCOPUS:82155172866
SN - 0018-9383
VL - 58
SP - 4276
EP - 4282
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 12
M1 - 6035770
ER -