Concentration dependence of carrier localization in InN epilayers

G. W. Shu, P. F. Wu, M. H. Lo, J. L. Shen, T. Y. Lin, H. J. Chang, Y. F. Chen, C. F. Shih, C. A. Chang, N. C. Chen

研究成果: Article

26 引文 斯高帕斯(Scopus)

摘要

The authors studied the concentration dependence of carrier localization in InN epilayers using time-resolved photo luminescence (PL). Based on the emission-energy dependence of the PL decays and the PL quenching in thermalization, the localization energy of carriers in InN is found to increase with carrier concentration. The dependence of carrier concentration on the localization energy of carriers in InN can be explained by a model based on the transition between free electrons in the conduction band and localized holes in the deeper tail states. They suggest that carrier localization originates from the potential fluctuations of randomly located impurities.

原文English
文章編號131913
期刊Applied Physics Letters
89
發行號13
DOIs
出版狀態Published - 2006 十月 6

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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