Conductive tail-to-tail domain walls in epitaxial BiFeO3 films

Yaming Jin, Shuyu Xiao, Jan Chi Yang, Junting Zhang, Xiaomei Lu, Ying Hao Chu, S. W. Cheong, Jiangyu Li, Yi Kan, Chen Yue, Yang Li, Changcheng Ju, Fengzhen Huang, Jinsong Zhu

研究成果: Article

2 引文 斯高帕斯(Scopus)

摘要

The complex conductive behavior of ferroelectric domain walls is attracting more and more attention for their potential application as an independent nanoelectronic component. For the (001) epitaxial BiFeO3 films, we find that the domain wall conductivity varies among 71° domain walls, with tail-to-tail (T-T) domain walls more conductive than head-to-head (H-H) and head-to-tail (H-T) ones. Furthermore, it is observed that most of the conductive areas are composed of two parallel lines around the T-T domain walls. These experimental results can be well simulated by our theoretical model based on the polarization configuration and a tunneling mechanism. Our work will help to understand the mechanism of domain wall conductance in ferroelectric materials and further promote the usage of domain walls in advanced nano-devices.

原文English
文章編號082904
期刊Applied Physics Letters
113
發行號8
DOIs
出版狀態Published - 2018 八月 20

    指紋

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

引用此

Jin, Y., Xiao, S., Yang, J. C., Zhang, J., Lu, X., Chu, Y. H., Cheong, S. W., Li, J., Kan, Y., Yue, C., Li, Y., Ju, C., Huang, F., & Zhu, J. (2018). Conductive tail-to-tail domain walls in epitaxial BiFeO3 films. Applied Physics Letters, 113(8), [082904]. https://doi.org/10.1063/1.5045721