The complex conductive behavior of ferroelectric domain walls is attracting more and more attention for their potential application as an independent nanoelectronic component. For the (001) epitaxial BiFeO3 films, we find that the domain wall conductivity varies among 71° domain walls, with tail-to-tail (T-T) domain walls more conductive than head-to-head (H-H) and head-to-tail (H-T) ones. Furthermore, it is observed that most of the conductive areas are composed of two parallel lines around the T-T domain walls. These experimental results can be well simulated by our theoretical model based on the polarization configuration and a tunneling mechanism. Our work will help to understand the mechanism of domain wall conductance in ferroelectric materials and further promote the usage of domain walls in advanced nano-devices.
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