Conductivity enhancement and semiconductor-metal transition in Ti-doped ZnO films

J. J. Lu; Y. M. Lu; S. I. Tasi; T. L. Hsiung; H. P. Wang; L. Y. Jang

doi:10.1016/j.optmat.2006.08.002

Conductivity enhancement and semiconductor-metal transition in Ti-doped ZnO films

J. J. Lu, Y. M. Lu, S. I. Tasi, T. L. Hsiung, H. P. Wang, L. Y. Jang

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106 引文斯高帕斯（Scopus）

摘要

Ti-doped ZnO films were deposited onto Corning 7059 glass substrates by simultaneous RF sputtering of Zn and DC magnetron sputtering of Ti. In this work, X-ray diffraction (XRD), electrical resistivity, X-ray absorption spectroscopy (XAS), optical transmission spectrum, and Hall-effect measurements were utilized in order to study the properties of the Ti-doped ZnO films. The resistivities of the ZnO: Ti films were reduced to a value of 3.82 × 10^-3 Ω cm, and a metallic conduction behavior was observed in the ZnO: Ti films with Ti = 1.3%. The enhancement of conductivity and the semiconductor-metal transition are likely attributed to the increase in the free carrier concentration, along with the band-gap shrinkage effects caused by Ti doping.

原文	English
頁（從 - 到）	1548-1552
頁數	5
期刊	Optical Materials
卷	29
發行號	11
DOIs	https://doi.org/10.1016/j.optmat.2006.08.002
出版狀態	Published - 2007 7月

All Science Journal Classification (ASJC) codes

電子、光磁材料
原子與分子物理與光學
光譜
物理與理論化學
有機化學
無機化學
電氣與電子工程

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10.1016/j.optmat.2006.08.002

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@article{6015f0df662743399877e4a6c01ff552,

title = "Conductivity enhancement and semiconductor-metal transition in Ti-doped ZnO films",

abstract = "Ti-doped ZnO films were deposited onto Corning 7059 glass substrates by simultaneous RF sputtering of Zn and DC magnetron sputtering of Ti. In this work, X-ray diffraction (XRD), electrical resistivity, X-ray absorption spectroscopy (XAS), optical transmission spectrum, and Hall-effect measurements were utilized in order to study the properties of the Ti-doped ZnO films. The resistivities of the ZnO: Ti films were reduced to a value of 3.82 × 10-3 Ω cm, and a metallic conduction behavior was observed in the ZnO: Ti films with Ti = 1.3%. The enhancement of conductivity and the semiconductor-metal transition are likely attributed to the increase in the free carrier concentration, along with the band-gap shrinkage effects caused by Ti doping.",

author = "Lu, {J. J.} and Lu, {Y. M.} and Tasi, {S. I.} and Hsiung, {T. L.} and Wang, {H. P.} and Jang, {L. Y.}",

note = "Funding Information: This work was supported by National Science Council of the Republic of China under contract No. NSC-95-2112-M-168-001. ",

year = "2007",

month = jul,

doi = "10.1016/j.optmat.2006.08.002",

language = "English",

volume = "29",

pages = "1548--1552",

journal = "Optical Materials",

issn = "0925-3467",

publisher = "Elsevier BV",

number = "11",

}

TY - JOUR

T1 - Conductivity enhancement and semiconductor-metal transition in Ti-doped ZnO films

AU - Lu, J. J.

AU - Lu, Y. M.

AU - Tasi, S. I.

AU - Hsiung, T. L.

AU - Wang, H. P.

AU - Jang, L. Y.

N1 - Funding Information: This work was supported by National Science Council of the Republic of China under contract No. NSC-95-2112-M-168-001.

PY - 2007/7

Y1 - 2007/7

N2 - Ti-doped ZnO films were deposited onto Corning 7059 glass substrates by simultaneous RF sputtering of Zn and DC magnetron sputtering of Ti. In this work, X-ray diffraction (XRD), electrical resistivity, X-ray absorption spectroscopy (XAS), optical transmission spectrum, and Hall-effect measurements were utilized in order to study the properties of the Ti-doped ZnO films. The resistivities of the ZnO: Ti films were reduced to a value of 3.82 × 10-3 Ω cm, and a metallic conduction behavior was observed in the ZnO: Ti films with Ti = 1.3%. The enhancement of conductivity and the semiconductor-metal transition are likely attributed to the increase in the free carrier concentration, along with the band-gap shrinkage effects caused by Ti doping.

AB - Ti-doped ZnO films were deposited onto Corning 7059 glass substrates by simultaneous RF sputtering of Zn and DC magnetron sputtering of Ti. In this work, X-ray diffraction (XRD), electrical resistivity, X-ray absorption spectroscopy (XAS), optical transmission spectrum, and Hall-effect measurements were utilized in order to study the properties of the Ti-doped ZnO films. The resistivities of the ZnO: Ti films were reduced to a value of 3.82 × 10-3 Ω cm, and a metallic conduction behavior was observed in the ZnO: Ti films with Ti = 1.3%. The enhancement of conductivity and the semiconductor-metal transition are likely attributed to the increase in the free carrier concentration, along with the band-gap shrinkage effects caused by Ti doping.

UR - http://www.scopus.com/inward/record.url?scp=34249075200&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34249075200&partnerID=8YFLogxK

U2 - 10.1016/j.optmat.2006.08.002

DO - 10.1016/j.optmat.2006.08.002

M3 - Article

AN - SCOPUS:34249075200

SN - 0925-3467

VL - 29

SP - 1548

EP - 1552

JO - Optical Materials

JF - Optical Materials

IS - 11

ER -

Conductivity enhancement and semiconductor-metal transition in Ti-doped ZnO films

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