Contact behavior of focused ion beam deposited Pt on p-type Si nanowires

C. Y. Ho; S. H. Chiu; J. J. Ke; K. T. Tsai; Y. A. Dai; J. H. Hsu; M. L. Chang; J. H. He

doi:10.1088/0957-4484/21/13/134008

Contact behavior of focused ion beam deposited Pt on p-type Si nanowires

C. Y. Ho
, S. H. Chiu
, J. J. Ke
, K. T. Tsai
, Y. A. Dai
, J. H. Hsu
, M. L. Chang
, J. H. He

機械工程學系

研究成果: Article › 同行評審

10 引文斯高帕斯（Scopus）

摘要

Pt contact on p-Si nanowires (NWs) using Ga-ion-induced deposition by a focused ion beam was formed with a specific contact resistance (ρ_c) of 1.54 × 10^{- 6}Ωcm². Ohmic behavior is caused by Ga-ion-induced amorphization of Si NWs underneath the Pt contact. A very low Schottky barrier height associated with interface states raised from Pt-amorphized Si junction and with an image force induced by the applied bias can be implemented to elucidate ultralow ρ_c. The value of ρ_c lower than that of any known contact to Si NWs demonstrates a practical method for integrating NWs in devices and circuits.

原文	English
文章編號	134008
期刊	Nanotechnology
卷	21
發行號	13
DOIs	https://doi.org/10.1088/0957-4484/21/13/134008
出版狀態	Published - 2010

All Science Journal Classification (ASJC) codes

生物工程
一般化學
一般材料科學
材料力學
機械工業
電氣與電子工程

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10.1088/0957-4484/21/13/134008

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abstract = "Pt contact on p-Si nanowires (NWs) using Ga-ion-induced deposition by a focused ion beam was formed with a specific contact resistance (ρc) of 1.54 × 10- 6Ωcm2. Ohmic behavior is caused by Ga-ion-induced amorphization of Si NWs underneath the Pt contact. A very low Schottky barrier height associated with interface states raised from Pt-amorphized Si junction and with an image force induced by the applied bias can be implemented to elucidate ultralow ρc. The value of ρc lower than that of any known contact to Si NWs demonstrates a practical method for integrating NWs in devices and circuits.",

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AU - Ho, C. Y.

AU - Chiu, S. H.

AU - Ke, J. J.

AU - Tsai, K. T.

AU - Dai, Y. A.

AU - Hsu, J. H.

AU - Chang, M. L.

AU - He, J. H.

PY - 2010

Y1 - 2010

N2 - Pt contact on p-Si nanowires (NWs) using Ga-ion-induced deposition by a focused ion beam was formed with a specific contact resistance (ρc) of 1.54 × 10- 6Ωcm2. Ohmic behavior is caused by Ga-ion-induced amorphization of Si NWs underneath the Pt contact. A very low Schottky barrier height associated with interface states raised from Pt-amorphized Si junction and with an image force induced by the applied bias can be implemented to elucidate ultralow ρc. The value of ρc lower than that of any known contact to Si NWs demonstrates a practical method for integrating NWs in devices and circuits.

AB - Pt contact on p-Si nanowires (NWs) using Ga-ion-induced deposition by a focused ion beam was formed with a specific contact resistance (ρc) of 1.54 × 10- 6Ωcm2. Ohmic behavior is caused by Ga-ion-induced amorphization of Si NWs underneath the Pt contact. A very low Schottky barrier height associated with interface states raised from Pt-amorphized Si junction and with an image force induced by the applied bias can be implemented to elucidate ultralow ρc. The value of ρc lower than that of any known contact to Si NWs demonstrates a practical method for integrating NWs in devices and circuits.

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AN - SCOPUS:77949399857

SN - 0957-4484

VL - 21

JO - Nanotechnology

JF - Nanotechnology

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ER -

Contact behavior of focused ion beam deposited Pt on p-type Si nanowires

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