Controllability of flatband voltage in high-k gate stack structures - Remarkable advantages of la2O3 over HfO2

K. Ohmori, P. Ahmet, K. Shiraishi, K. Yamabe, H. Watanabe, Y. Akasaka, N. Umezawa, K. Nakajima, M. Yoshitake, T. Nakayama, K. S. Chang, K. Kakushima, Y. Nara, M. L. Green, H. Iwai, K. Yamada, T. Chikyow

研究成果: Conference contribution

1 引文 斯高帕斯(Scopus)

摘要

We have achieved a remarkably wide range (∼1.2 V) of differences in flatband voltage (Vfb) by using a combination of metal alloy (Pt-W)/La2O3 gate stacks. The controllable range is about 3 times greater than that of Hf-based gate stacks. The wide range of V fb can be maintained even after annealing in forming gas and oxidizing gas ambients. We consider that this is attributed to charge transfer at the Pt/La2O3 interfaces inducing increase in the effective work functions, especially at high Pt composition ratios. We believe that La2O3 is one of the most promising high-k dielectric materials for future CMOS devices in 32nm-node and beyond.

原文English
主出版物標題ICSICT-2006
主出版物子標題2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
發行者IEEE Computer Society
頁面376-379
頁數4
ISBN(列印)1424401615, 9781424401611
DOIs
出版狀態Published - 2006 一月 1
事件ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
持續時間: 2006 十月 232006 十月 26

出版系列

名字ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

OtherICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
國家China
城市Shanghai
期間06-10-2306-10-26

    指紋

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

引用此

Ohmori, K., Ahmet, P., Shiraishi, K., Yamabe, K., Watanabe, H., Akasaka, Y., ... Chikyow, T. (2006). Controllability of flatband voltage in high-k gate stack structures - Remarkable advantages of la2O3 over HfO2. 於 ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings (頁 376-379). [4098113] (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). IEEE Computer Society. https://doi.org/10.1109/ICSICT.2006.306256