Controllability of flatband voltage in high-k gate stack structures - Remarkable advantages of la2O3 over HfO2

K. Ohmori, P. Ahmet, K. Shiraishi, K. Yamabe, H. Watanabe, Y. Akasaka, N. Umezawa, K. Nakajima, M. Yoshitake, T. Nakayama, Kao-Shuo Chang, K. Kakushima, Y. Nara, M. L. Green, H. Iwai, K. Yamada, T. Chikyow

研究成果: Conference contribution

1 引文 (Scopus)

摘要

We have achieved a remarkably wide range (∼1.2 V) of differences in flatband voltage (Vfb) by using a combination of metal alloy (Pt-W)/La2O3 gate stacks. The controllable range is about 3 times greater than that of Hf-based gate stacks. The wide range of V fb can be maintained even after annealing in forming gas and oxidizing gas ambients. We consider that this is attributed to charge transfer at the Pt/La2O3 interfaces inducing increase in the effective work functions, especially at high Pt composition ratios. We believe that La2O3 is one of the most promising high-k dielectric materials for future CMOS devices in 32nm-node and beyond.

原文English
主出版物標題ICSICT-2006
主出版物子標題2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
發行者IEEE Computer Society
頁面376-379
頁數4
ISBN(列印)1424401615, 9781424401611
DOIs
出版狀態Published - 2006 一月 1
事件ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
持續時間: 2006 十月 232006 十月 26

出版系列

名字ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

OtherICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
國家China
城市Shanghai
期間06-10-2306-10-26

指紋

Controllability
Electric potential
Gases
Charge transfer
Annealing
Metals
Chemical analysis
High-k dielectric

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

引用此文

Ohmori, K., Ahmet, P., Shiraishi, K., Yamabe, K., Watanabe, H., Akasaka, Y., ... Chikyow, T. (2006). Controllability of flatband voltage in high-k gate stack structures - Remarkable advantages of la2O3 over HfO2. 於 ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings (頁 376-379). [4098113] (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). IEEE Computer Society. https://doi.org/10.1109/ICSICT.2006.306256
Ohmori, K. ; Ahmet, P. ; Shiraishi, K. ; Yamabe, K. ; Watanabe, H. ; Akasaka, Y. ; Umezawa, N. ; Nakajima, K. ; Yoshitake, M. ; Nakayama, T. ; Chang, Kao-Shuo ; Kakushima, K. ; Nara, Y. ; Green, M. L. ; Iwai, H. ; Yamada, K. ; Chikyow, T. / Controllability of flatband voltage in high-k gate stack structures - Remarkable advantages of la2O3 over HfO2. ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society, 2006. 頁 376-379 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).
@inproceedings{30ccaf222b364accbc8c5130f13bad71,
title = "Controllability of flatband voltage in high-k gate stack structures - Remarkable advantages of la2O3 over HfO2",
abstract = "We have achieved a remarkably wide range (∼1.2 V) of differences in flatband voltage (Vfb) by using a combination of metal alloy (Pt-W)/La2O3 gate stacks. The controllable range is about 3 times greater than that of Hf-based gate stacks. The wide range of V fb can be maintained even after annealing in forming gas and oxidizing gas ambients. We consider that this is attributed to charge transfer at the Pt/La2O3 interfaces inducing increase in the effective work functions, especially at high Pt composition ratios. We believe that La2O3 is one of the most promising high-k dielectric materials for future CMOS devices in 32nm-node and beyond.",
author = "K. Ohmori and P. Ahmet and K. Shiraishi and K. Yamabe and H. Watanabe and Y. Akasaka and N. Umezawa and K. Nakajima and M. Yoshitake and T. Nakayama and Kao-Shuo Chang and K. Kakushima and Y. Nara and Green, {M. L.} and H. Iwai and K. Yamada and T. Chikyow",
year = "2006",
month = "1",
day = "1",
doi = "10.1109/ICSICT.2006.306256",
language = "English",
isbn = "1424401615",
series = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",
publisher = "IEEE Computer Society",
pages = "376--379",
booktitle = "ICSICT-2006",
address = "United States",

}

Ohmori, K, Ahmet, P, Shiraishi, K, Yamabe, K, Watanabe, H, Akasaka, Y, Umezawa, N, Nakajima, K, Yoshitake, M, Nakayama, T, Chang, K-S, Kakushima, K, Nara, Y, Green, ML, Iwai, H, Yamada, K & Chikyow, T 2006, Controllability of flatband voltage in high-k gate stack structures - Remarkable advantages of la2O3 over HfO2. 於 ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 4098113, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, IEEE Computer Society, 頁 376-379, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China, 06-10-23. https://doi.org/10.1109/ICSICT.2006.306256

Controllability of flatband voltage in high-k gate stack structures - Remarkable advantages of la2O3 over HfO2. / Ohmori, K.; Ahmet, P.; Shiraishi, K.; Yamabe, K.; Watanabe, H.; Akasaka, Y.; Umezawa, N.; Nakajima, K.; Yoshitake, M.; Nakayama, T.; Chang, Kao-Shuo; Kakushima, K.; Nara, Y.; Green, M. L.; Iwai, H.; Yamada, K.; Chikyow, T.

ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society, 2006. p. 376-379 4098113 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

研究成果: Conference contribution

TY - GEN

T1 - Controllability of flatband voltage in high-k gate stack structures - Remarkable advantages of la2O3 over HfO2

AU - Ohmori, K.

AU - Ahmet, P.

AU - Shiraishi, K.

AU - Yamabe, K.

AU - Watanabe, H.

AU - Akasaka, Y.

AU - Umezawa, N.

AU - Nakajima, K.

AU - Yoshitake, M.

AU - Nakayama, T.

AU - Chang, Kao-Shuo

AU - Kakushima, K.

AU - Nara, Y.

AU - Green, M. L.

AU - Iwai, H.

AU - Yamada, K.

AU - Chikyow, T.

PY - 2006/1/1

Y1 - 2006/1/1

N2 - We have achieved a remarkably wide range (∼1.2 V) of differences in flatband voltage (Vfb) by using a combination of metal alloy (Pt-W)/La2O3 gate stacks. The controllable range is about 3 times greater than that of Hf-based gate stacks. The wide range of V fb can be maintained even after annealing in forming gas and oxidizing gas ambients. We consider that this is attributed to charge transfer at the Pt/La2O3 interfaces inducing increase in the effective work functions, especially at high Pt composition ratios. We believe that La2O3 is one of the most promising high-k dielectric materials for future CMOS devices in 32nm-node and beyond.

AB - We have achieved a remarkably wide range (∼1.2 V) of differences in flatband voltage (Vfb) by using a combination of metal alloy (Pt-W)/La2O3 gate stacks. The controllable range is about 3 times greater than that of Hf-based gate stacks. The wide range of V fb can be maintained even after annealing in forming gas and oxidizing gas ambients. We consider that this is attributed to charge transfer at the Pt/La2O3 interfaces inducing increase in the effective work functions, especially at high Pt composition ratios. We believe that La2O3 is one of the most promising high-k dielectric materials for future CMOS devices in 32nm-node and beyond.

UR - http://www.scopus.com/inward/record.url?scp=34547271018&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547271018&partnerID=8YFLogxK

U2 - 10.1109/ICSICT.2006.306256

DO - 10.1109/ICSICT.2006.306256

M3 - Conference contribution

AN - SCOPUS:34547271018

SN - 1424401615

SN - 9781424401611

T3 - ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

SP - 376

EP - 379

BT - ICSICT-2006

PB - IEEE Computer Society

ER -

Ohmori K, Ahmet P, Shiraishi K, Yamabe K, Watanabe H, Akasaka Y 等. Controllability of flatband voltage in high-k gate stack structures - Remarkable advantages of la2O3 over HfO2. 於 ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society. 2006. p. 376-379. 4098113. (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2006.306256