Controllable drain cut-in voltage with strong negative differential resistance in GaAs/InGaAs real-space transfer heterostructure

Jan Shing Su, Wei Chou Hsu, Yu Shyan Lin, Wei Lin

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

Three-terminal GaAs/InGaAs/GaAs pseudomorphic real-space transfer heterostructure employing graded channel as the emitter layer grown by low-pressure metal-organic chemical-vapor deposition has been fabricated. We observe controllable drain cut-in voltage characteristics with strong negative differential resistance. The largest peak-to-valley current ratio of the proposed device is about 33 000 at room temperature. Moreover, we observe an energy exchange effect between electrons.

原文English
頁(從 - 到)1002-1004
頁數3
期刊Applied Physics Letters
70
發行號8
DOIs
出版狀態Published - 1997 二月 24

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

指紋 深入研究「Controllable drain cut-in voltage with strong negative differential resistance in GaAs/InGaAs real-space transfer heterostructure」主題。共同形成了獨特的指紋。

引用此