Controlled nucleation and growth of graphene: Competitive growth and etching in hydrogen diluted methane

Yon-Hua Tzeng, Kengchih Liang, Chih Yi Liu, Chun Cheng Chang, Yikuan Wu

研究成果: Conference contribution

1 引文 斯高帕斯(Scopus)

摘要

Synthesis of graphene of large domain sizes in order to minimize scattering of charge carriers in grain boundaries is an essential process to be achieved before the full merits of graphene can be realized for next-generation nanoelectronics. Independent control of nucleation processes and growth processes in the complicated chemical vapor deposition environments is a key to achieving this goal. Catalyst assisted chemical vapor deposition of graphene on copper at around 1000°C near the melting point of copper in hydrogen diluted methane is fine tuned to reach dynamic balance between etching and growth of graphene. Surface diffusion of carbon atoms generated from methane and other hydrocarbon species, including those from etching graphene by atomic hydrogen, generated by the assistance of copper catalyst on the surface of copper foil results in complicated network of graphene domains separated by alley-like gaps of nearly equal width. By controlling the dynamic balance point, independent control of nucleation and growth and the synthesis of large individual graphene of various unique shapes and graphene films with networked alleys have been demonstrated.

原文English
主出版物標題2012 12th IEEE International Conference on Nanotechnology, NANO 2012
DOIs
出版狀態Published - 2012 十一月 22
事件2012 12th IEEE International Conference on Nanotechnology, NANO 2012 - Birmingham, United Kingdom
持續時間: 2012 八月 202012 八月 23

出版系列

名字Proceedings of the IEEE Conference on Nanotechnology
ISSN(列印)1944-9399
ISSN(電子)1944-9380

Other

Other2012 12th IEEE International Conference on Nanotechnology, NANO 2012
國家United Kingdom
城市Birmingham
期間12-08-2012-08-23

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

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