Convergence of hot-carrier-induced saturation-region drain current and linear-region drain current degradation in advanced n-channel metal-oxide-semiconductor field-effect transistors

Jone F. Chen, Chih Pin Tsao

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

A report on the relationship between hot carrier induced drain current degradation and characterization drain voltage in n-channel MOSFET fabricated using 0.18 μm technology, was presented. It was shown that the maximum drain current degradation occurs at a characterization drain voltage that is higher than 0.1 V. This phenomenon is due to two competing mechanisms as the characterization drain voltage increases: the reduction in channel inversion charges and the reduction in charged interface states.

原文English
頁(從 - 到)1872-1874
頁數3
期刊Applied Physics Letters
83
發行號9
DOIs
出版狀態Published - 2003 九月 1

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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