Convergence of hot-carrier-induced saturation region drain current and on-resistance degradation in drain extended MOS transistors

Jone-Fang Chen, Shiang Yu Chen, Kuo Ming Wu, J. R. Shih, Kenneth Wu

研究成果: Article同行評審

14 引文 斯高帕斯(Scopus)

摘要

Hot-carrier-induced device degradation in n-type high-voltage drain-extended MOS (DEMOS) devices stressed under high drain voltage and high gate voltage (Vg) is investigated. Charge pumping data and technology computer-aided-design simulation results reveal that hot-carrier-induced interface state formation in the gate overlapped shallow trench isolation region is responsible for device degradation. Furthermore, an unexpected high saturation region drain current (Id(sat)) degradation (close to on-resistance degradation) is observed. The occurrence of quasi-saturation under high Vg bias is the cause of significant Id(sat) degradation. The results presented in this paper suggest that severe Id(sat) degradation may become a reliability concern for devices exhibiting the quasi-saturation phenomenon.

原文English
頁(從 - 到)2843-2847
頁數5
期刊IEEE Transactions on Electron Devices
56
發行號11
DOIs
出版狀態Published - 2009 九月 22

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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