Conversion efficiency improvement of InGaN/GaN multiple-quantum-well solar cells with Ex Situ AlN nucleation layer

Chun Ta Yu, Wei Chih Lai, Cheng Hsiung Yen, Ching Wen Chang, Li Wei Tu, Shoou Jinn Chang

研究成果: Article

3 引文 (Scopus)

摘要

The crystal quality, electrical, and optical characteristics of GaN solar cells (SCs) were improved using ex situ AlN nucleation layer. Replacing the in situ GaN nucleation layer with the sputtered ex situ AlN nucleation layer reduced the total dislocation density of GaN layer from 3.7 × 108 to 2.2 × 108 cm-2. The dislocation density reduction of GaN with sputtered ex situ AlN nucleation could suppress the reverse leakage current and the forward recombination current in low forward voltage range of SCs, and thus can increase shortcircuit current density ( Jsc) and open-circuit voltage (Voc) of the SCs. A 1-sun power conversion efficiency (η%) of SCs with ex situ AlN nucleation (1.89%) showed an enhancement of 26% compared with that of conventional SC (1.50%). Furthermore, the 100-sun η% of SCs with ex situ AlN nucleation (1.97%) showed 18% improvement compared with that of conventional SC (1.67%).

原文English
文章編號7078911
頁(從 - 到)1473-1477
頁數5
期刊IEEE Transactions on Electron Devices
62
發行號5
DOIs
出版狀態Published - 2015 五月 1

指紋

Semiconductor quantum wells
Conversion efficiency
Solar cells
Nucleation
Sun
Open circuit voltage
Leakage currents
Current density
Crystals
Electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

引用此文

@article{ad611472b32242e9ae48e9d3e0617c75,
title = "Conversion efficiency improvement of InGaN/GaN multiple-quantum-well solar cells with Ex Situ AlN nucleation layer",
abstract = "The crystal quality, electrical, and optical characteristics of GaN solar cells (SCs) were improved using ex situ AlN nucleation layer. Replacing the in situ GaN nucleation layer with the sputtered ex situ AlN nucleation layer reduced the total dislocation density of GaN layer from 3.7 × 108 to 2.2 × 108 cm-2. The dislocation density reduction of GaN with sputtered ex situ AlN nucleation could suppress the reverse leakage current and the forward recombination current in low forward voltage range of SCs, and thus can increase shortcircuit current density ( Jsc) and open-circuit voltage (Voc) of the SCs. A 1-sun power conversion efficiency (η{\%}) of SCs with ex situ AlN nucleation (1.89{\%}) showed an enhancement of 26{\%} compared with that of conventional SC (1.50{\%}). Furthermore, the 100-sun η{\%} of SCs with ex situ AlN nucleation (1.97{\%}) showed 18{\%} improvement compared with that of conventional SC (1.67{\%}).",
author = "Yu, {Chun Ta} and Lai, {Wei Chih} and Yen, {Cheng Hsiung} and Chang, {Ching Wen} and Tu, {Li Wei} and Chang, {Shoou Jinn}",
year = "2015",
month = "5",
day = "1",
doi = "10.1109/TED.2015.2415254",
language = "English",
volume = "62",
pages = "1473--1477",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "5",

}

Conversion efficiency improvement of InGaN/GaN multiple-quantum-well solar cells with Ex Situ AlN nucleation layer. / Yu, Chun Ta; Lai, Wei Chih; Yen, Cheng Hsiung; Chang, Ching Wen; Tu, Li Wei; Chang, Shoou Jinn.

於: IEEE Transactions on Electron Devices, 卷 62, 編號 5, 7078911, 01.05.2015, p. 1473-1477.

研究成果: Article

TY - JOUR

T1 - Conversion efficiency improvement of InGaN/GaN multiple-quantum-well solar cells with Ex Situ AlN nucleation layer

AU - Yu, Chun Ta

AU - Lai, Wei Chih

AU - Yen, Cheng Hsiung

AU - Chang, Ching Wen

AU - Tu, Li Wei

AU - Chang, Shoou Jinn

PY - 2015/5/1

Y1 - 2015/5/1

N2 - The crystal quality, electrical, and optical characteristics of GaN solar cells (SCs) were improved using ex situ AlN nucleation layer. Replacing the in situ GaN nucleation layer with the sputtered ex situ AlN nucleation layer reduced the total dislocation density of GaN layer from 3.7 × 108 to 2.2 × 108 cm-2. The dislocation density reduction of GaN with sputtered ex situ AlN nucleation could suppress the reverse leakage current and the forward recombination current in low forward voltage range of SCs, and thus can increase shortcircuit current density ( Jsc) and open-circuit voltage (Voc) of the SCs. A 1-sun power conversion efficiency (η%) of SCs with ex situ AlN nucleation (1.89%) showed an enhancement of 26% compared with that of conventional SC (1.50%). Furthermore, the 100-sun η% of SCs with ex situ AlN nucleation (1.97%) showed 18% improvement compared with that of conventional SC (1.67%).

AB - The crystal quality, electrical, and optical characteristics of GaN solar cells (SCs) were improved using ex situ AlN nucleation layer. Replacing the in situ GaN nucleation layer with the sputtered ex situ AlN nucleation layer reduced the total dislocation density of GaN layer from 3.7 × 108 to 2.2 × 108 cm-2. The dislocation density reduction of GaN with sputtered ex situ AlN nucleation could suppress the reverse leakage current and the forward recombination current in low forward voltage range of SCs, and thus can increase shortcircuit current density ( Jsc) and open-circuit voltage (Voc) of the SCs. A 1-sun power conversion efficiency (η%) of SCs with ex situ AlN nucleation (1.89%) showed an enhancement of 26% compared with that of conventional SC (1.50%). Furthermore, the 100-sun η% of SCs with ex situ AlN nucleation (1.97%) showed 18% improvement compared with that of conventional SC (1.67%).

UR - http://www.scopus.com/inward/record.url?scp=85027953904&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85027953904&partnerID=8YFLogxK

U2 - 10.1109/TED.2015.2415254

DO - 10.1109/TED.2015.2415254

M3 - Article

AN - SCOPUS:85027953904

VL - 62

SP - 1473

EP - 1477

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 5

M1 - 7078911

ER -