Conversion efficiency improvement of inverted CH3NH3PbI3 perovskite solar cells with room temperature sputtered ZnO by adding the C60 interlayer

Wei-Chi Lai, Kun Wei Lin, Tzung-Fang Guo, Chao-Yu Chen, Yuan Ting Wang

研究成果: Article

25 引文 (Scopus)

摘要

We have demonstrated the performance of inverted CH3NH3PbI3 perovskite-based solar cells (SCs) with a room temperature (RT) sputtered ZnO electron transport layer by adding fullerene (C60) interlayer. ZnO exhibits a better matched conduction band level with perovskite and Al work function and around energy offset of 2.2 eV between highest occupied molecular orbital level of CH3NH3PbI3 perovskite and valance band level of ZnO. However, the CH3NH3PbI3 perovskite layer will be damaged during direct RT sputtering deposition of ZnO. Therefore, the C60 interlayer having matched conduction band level with ZnO and CH3NH3PbI3 perovskite added between the CH3NH3PbI3 perovskite and RT sputtered ZnO layers for protection prevents sputtering damages on the CH3NH3PbI3 perovskite layer. The short-circuit current density (JSC, 19.41 mA/cm2) and open circuit voltage (VOC, 0.91 V) of the SCs with glass/ITO/poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS)/perovskite/C60/RT sputtered ZnO/Al structure is higher than the JSC (16.23 mA/cm2) and VOC (0.90 V) of the reference SC with glass/ITO/PEDOT:PSS/perovskite/C60/bathocuproine (BCP)/Al structure. Although the SCs with the former structure has a lower fill factor (FF%) than the SCs with the latter structure, its conversion efficiency η% (10.93%) is higher than that (10.6%) of the latter.

原文English
文章編號253301
期刊Applied Physics Letters
107
發行號25
DOIs
出版狀態Published - 2015 十二月 21

指紋

interlayers
solar cells
room temperature
volatile organic compounds
sulfonates
ITO (semiconductors)
polystyrene
conduction bands
sputtering
glass
short circuit currents
open circuit voltage
fullerenes
molecular orbitals
current density
damage
electrons
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

引用此文

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title = "Conversion efficiency improvement of inverted CH3NH3PbI3 perovskite solar cells with room temperature sputtered ZnO by adding the C60 interlayer",
abstract = "We have demonstrated the performance of inverted CH3NH3PbI3 perovskite-based solar cells (SCs) with a room temperature (RT) sputtered ZnO electron transport layer by adding fullerene (C60) interlayer. ZnO exhibits a better matched conduction band level with perovskite and Al work function and around energy offset of 2.2 eV between highest occupied molecular orbital level of CH3NH3PbI3 perovskite and valance band level of ZnO. However, the CH3NH3PbI3 perovskite layer will be damaged during direct RT sputtering deposition of ZnO. Therefore, the C60 interlayer having matched conduction band level with ZnO and CH3NH3PbI3 perovskite added between the CH3NH3PbI3 perovskite and RT sputtered ZnO layers for protection prevents sputtering damages on the CH3NH3PbI3 perovskite layer. The short-circuit current density (JSC, 19.41 mA/cm2) and open circuit voltage (VOC, 0.91 V) of the SCs with glass/ITO/poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS)/perovskite/C60/RT sputtered ZnO/Al structure is higher than the JSC (16.23 mA/cm2) and VOC (0.90 V) of the reference SC with glass/ITO/PEDOT:PSS/perovskite/C60/bathocuproine (BCP)/Al structure. Although the SCs with the former structure has a lower fill factor (FF{\%}) than the SCs with the latter structure, its conversion efficiency η{\%} (10.93{\%}) is higher than that (10.6{\%}) of the latter.",
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AB - We have demonstrated the performance of inverted CH3NH3PbI3 perovskite-based solar cells (SCs) with a room temperature (RT) sputtered ZnO electron transport layer by adding fullerene (C60) interlayer. ZnO exhibits a better matched conduction band level with perovskite and Al work function and around energy offset of 2.2 eV between highest occupied molecular orbital level of CH3NH3PbI3 perovskite and valance band level of ZnO. However, the CH3NH3PbI3 perovskite layer will be damaged during direct RT sputtering deposition of ZnO. Therefore, the C60 interlayer having matched conduction band level with ZnO and CH3NH3PbI3 perovskite added between the CH3NH3PbI3 perovskite and RT sputtered ZnO layers for protection prevents sputtering damages on the CH3NH3PbI3 perovskite layer. The short-circuit current density (JSC, 19.41 mA/cm2) and open circuit voltage (VOC, 0.91 V) of the SCs with glass/ITO/poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS)/perovskite/C60/RT sputtered ZnO/Al structure is higher than the JSC (16.23 mA/cm2) and VOC (0.90 V) of the reference SC with glass/ITO/PEDOT:PSS/perovskite/C60/bathocuproine (BCP)/Al structure. Although the SCs with the former structure has a lower fill factor (FF%) than the SCs with the latter structure, its conversion efficiency η% (10.93%) is higher than that (10.6%) of the latter.

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