Copper diffusion barrier properties of a 10 nm W-Mo alloy films on porous SiOC:H

Kuo Chung Hsu, Dung Ching Perng, Jia Bin Yeh, Ruo Ping Chang, Jia Feng Fang, Climbing Huang

研究成果: Conference contribution

摘要

The thermal properties of 10 nm W-Mo alloy films as copper diffusion barrier on porous SiOCH were studied. The GIXRD results show that this layer has great barrier capabilities against copper penetration. Cross-sectional TEM image and EDS line profiles taken from TEM sample indicate Mo and W still accumulate at the interface. Sharp decline of Cu and Si concentrations at interface and lack of Cu penetrations to porous SiOCH, indicating that W-Mo barrier was effective for sample annealed at 600°C for 30min. Cu agglomeration occurred after 5 min 700°C annealing, suggesting that Cu had poor adhesion to underneath barrier. The 10nm W-Mo layer could be a potential barrier candidate for advanced copper interconnects.

原文English
主出版物標題Advanced Metallization Conference 2008, AMC 2008
頁面313-317
頁數5
出版狀態Published - 2009
事件Advanced Metallization Conference 2008, AMC 2008 - San Diego, CA, United States
持續時間: 2008 九月 232008 九月 25

出版系列

名字Advanced Metallization Conference (AMC)
ISSN(列印)1540-1766

Other

OtherAdvanced Metallization Conference 2008, AMC 2008
國家/地區United States
城市San Diego, CA
期間08-09-2308-09-25

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 工業與製造工程

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