Copper surface protection with a completely enclosed copper structure for a damascene process

T. C. Wang, T. E. Hsieh, Y. L. Wang, Y. L. Wu, Kuang-Yao Lo, C. W. Liu, K. W. Chen

研究成果: Conference article

摘要

As integrated circuit manufacture moving to copper interconnection for the most advanced products, protection of copper (Cu) surfaces becomes a major challenge for the back-end-of-line manufacturing process. The damages on Cu, such as Cu corrosion and oxidation, are often observed on wafers when exposing bare Cu surface in the presence of moisture and/or acidic gases. Furthermore, the Cu oxide results in poor adhesion both at Cu/barrier layer and Cu/stop layer interfaces. In this work, a novel Cu dual damascene structure which completely encloses the Cu surface with a tantalum nitride layer is presented. This capping layer avoids the Cu corrosion and oxidation due to its ability to keep moisture and acid off and away from the Cu surface.

原文English
頁(從 - 到)542-548
頁數7
期刊Thin Solid Films
447-448
DOIs
出版狀態Published - 2004 一月 30
事件Proceedings of the 30th International Conference on Metallurgie - San Diego, CA, United States
持續時間: 2002 四月 282002 五月 2

    指紋

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

引用此

Wang, T. C., Hsieh, T. E., Wang, Y. L., Wu, Y. L., Lo, K-Y., Liu, C. W., & Chen, K. W. (2004). Copper surface protection with a completely enclosed copper structure for a damascene process. Thin Solid Films, 447-448, 542-548. https://doi.org/10.1016/j.tsf.2003.07.025