Correlation between random telegraph noise and 1/f noise parameters in 28-nm pMOSFETs with tip-shaped SiGe source/drain

Bo Chin Wang, San Lein Wu, Chien Wei Huang, Yu Ying Lu, Shoou Jinn Chang, Yu Min Lin, Kun Hsien Lee, Osbert Cheng

研究成果: Article

10 引文 (Scopus)

摘要

The random telegraph noise (RTN) characteristics of 28-nm pMOSFETs with tip-shaped SiGe source/drain have been investigated. RTN analysis found that strained devices undergo higher compressive strain; the trap position from the Si/SiO 2 interface is reduced, because of the closer trap energy level near the valence band. Although tip-shaped SiGe process induces higher oxide trap density, the trap position corresponding to the tunneling attenuation length (λ) may result in lower 1/f noise level in tip-shaped SiGe S/D devices as compared with that of control devices.

原文English
文章編號6203555
頁(從 - 到)928-930
頁數3
期刊IEEE Electron Device Letters
33
發行號7
DOIs
出版狀態Published - 2012 五月 29

指紋

Telegraph
Valence bands
Oxides
Electron energy levels

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

引用此文

Wang, Bo Chin ; Wu, San Lein ; Huang, Chien Wei ; Lu, Yu Ying ; Chang, Shoou Jinn ; Lin, Yu Min ; Lee, Kun Hsien ; Cheng, Osbert. / Correlation between random telegraph noise and 1/f noise parameters in 28-nm pMOSFETs with tip-shaped SiGe source/drain. 於: IEEE Electron Device Letters. 2012 ; 卷 33, 編號 7. 頁 928-930.
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Correlation between random telegraph noise and 1/f noise parameters in 28-nm pMOSFETs with tip-shaped SiGe source/drain. / Wang, Bo Chin; Wu, San Lein; Huang, Chien Wei; Lu, Yu Ying; Chang, Shoou Jinn; Lin, Yu Min; Lee, Kun Hsien; Cheng, Osbert.

於: IEEE Electron Device Letters, 卷 33, 編號 7, 6203555, 29.05.2012, p. 928-930.

研究成果: Article

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AU - Chang, Shoou Jinn

AU - Lin, Yu Min

AU - Lee, Kun Hsien

AU - Cheng, Osbert

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AB - The random telegraph noise (RTN) characteristics of 28-nm pMOSFETs with tip-shaped SiGe source/drain have been investigated. RTN analysis found that strained devices undergo higher compressive strain; the trap position from the Si/SiO 2 interface is reduced, because of the closer trap energy level near the valence band. Although tip-shaped SiGe process induces higher oxide trap density, the trap position corresponding to the tunneling attenuation length (λ) may result in lower 1/f noise level in tip-shaped SiGe S/D devices as compared with that of control devices.

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