@article{27135376d82f4950865d97ca4d2018f1,
title = "Correlation between random telegraph noise and 1/f noise parameters in 28-nm pMOSFETs with tip-shaped SiGe source/drain",
abstract = "The random telegraph noise (RTN) characteristics of 28-nm pMOSFETs with tip-shaped SiGe source/drain have been investigated. RTN analysis found that strained devices undergo higher compressive strain; the trap position from the Si/SiO 2 interface is reduced, because of the closer trap energy level near the valence band. Although tip-shaped SiGe process induces higher oxide trap density, the trap position corresponding to the tunneling attenuation length (λ) may result in lower 1/f noise level in tip-shaped SiGe S/D devices as compared with that of control devices.",
author = "Wang, {Bo Chin} and Wu, {San Lein} and Huang, {Chien Wei} and Lu, {Yu Ying} and Chang, {Shoou Jinn} and Lin, {Yu Min} and Lee, {Kun Hsien} and Osbert Cheng",
note = "Funding Information: Manuscript received March 12, 2012; revised April 5, 2012; accepted April 6, 2012. Date of publication May 22, 2012; date of current version June 22, 2012. This work was supported in part by the National Science Council of Taiwan under Contract NSC 100-2221-E-230-007, by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University (NCKU), by the Advanced Optoelectronic Technology Center, NCKU, under projects from the Ministry of Education and Grant 101-D0204-6, and by the LED Lighting Research Center of NCKU for the assistance of device characterization. The review of this letter was arranged by Editor M. {\"O}stling.",
year = "2012",
doi = "10.1109/LED.2012.2195290",
language = "English",
volume = "33",
pages = "928--930",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "7",
}