Correlation of growth of pentacene films at various gas ambience conditions to organic field-effect transistor characteristics

W. Y. Chou, Y. S. Mai, H. L. Cheng, C. Y. Yeh, C. W. Kuo, F. C. Tang, D. Y. Shu, T. R. Yew, T. C. Wen

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27 引文 斯高帕斯(Scopus)

摘要

Pentacene based thin-film transistors (TFTs) have been fabricated using pentacene films grown under various ambiences, such as N2, H2, Ar, He, and high vacuum, to define correlation of the device performance, in particular mobility properties, to molecular ordering in pentacene films. The field-effect mobility of 0.24 cm2/Vs was obtained from TFTs fabricated under 2 × 10-5 Torr nitrogen ambience, however, the pentacene TFTs fabricated in hydrogen ambience under the same pressure yielded very poor mobility of 0.008 cm2/Vs. Pentacene films deposited by thermal evaporation at increased pressure in nitrogen ambience have a high degree of molecular ordering with larger dendritic grains without any surface modification on silicon oxide dielectric. A clean relation between field-effect mobility and XRD estimated crystallites size was obtained.

原文English
頁(從 - 到)445-451
頁數7
期刊Organic Electronics
7
發行號6
DOIs
出版狀態Published - 2006 12月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 生物材料
  • 一般化學
  • 凝聚態物理學
  • 材料化學
  • 電氣與電子工程

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