Cr metal thin film memory

Augustin J. Hong, Jiyoung Kim, Kyoungwhan Kim, Yong Wang, Faxian Xiu, Jaeseok Jeon, Jemin Park, Iris Rauda, Li Min Chen, Yang Yang, Sarah Tolbert, Jin Zou, Kang L. Wang

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

As state of the art flash memory technologies scale down to sub 30 nm node, conventional floating gate flash memory approaches its physical scaling limit mainly because of the high gate coupling ratio (GCR) requirement to secure proper memory window. Here, we report a novel flash memory device called Cr metal thin film memory (MTFM) that can circumvent the GCR issue and extend flash memory scalability by employing Cr thin film as a storage layer. Cr metal thin film memory devices with simple and low temperature processes produced a wide memory window of 10 V at the ±18 V voltage sweep with GCR of only 0.3. Such a large window can be adopted for multi-level cell operations, which can further increase the memory density. Also, retention measurement shows more than 10 years retention time due to higher energy barrier between Cr metal and tunnel oxide than conventional poly silicon and tunnel oxide. Cross section transmission electron microscope (TEM) images showed the structure and accurate dimensions of the Cr MTFM device with continuous Cr film and sharp interfaces. As for material characterizations, an amorphous like Cr phase was observed through TEM and x-ray diffraction (XRD). X-ray photoelectron spectroscopy (XPS) confirmed the Cr-Cr bond and Cr-O bond near the Cr surface after evaporation and rapid thermal annealing. This metal thin film memory may open a new route to achieve the terabit level flash memory.

原文English
文章編號054504
期刊Journal of Applied Physics
110
發行號5
DOIs
出版狀態Published - 2011 九月 1

All Science Journal Classification (ASJC) codes

  • 物理與天文學 (全部)

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