Crack-free high-brightness InGaN/GaN LEDs on Si(111) with initial AlGaN buffer and two LT-Al interlayers

Y. P. Hsu; S. J. Chang; W. S. Chen; J. K. Sheu; J. Y. Chu; C. T. Kuo

doi:10.1149/1.2429040

Crack-free high-brightness InGaN/GaN LEDs on Si(111) with initial AlGaN buffer and two LT-Al interlayers

Y. P. Hsu, S. J. Chang, W. S. Chen, J. K. Sheu, J. Y. Chu, C. T. Kuo

研究成果: Article › 同行評審

10 引文斯高帕斯（Scopus）

摘要

We report the fabrication of low-cost, high-brightness, and crack-free blue GaN light-emitting diodes on Si(111) substrates with AlGaN initial buffer and two low-temperature (LT) AlN interlayers. With 20 mA current injection, it was found that the LED forward voltages were 3.5 and 4.8 V for the horizontal and vertical LEDs, respectively. It was also found that output power of the blue InGaNGaN horizontal blue LED prepared on Si substrate was about 1.5 mW.

原文	English
頁（從 - 到）	H191-H193
期刊	Journal of the Electrochemical Society
卷	154
發行號	3
DOIs	https://doi.org/10.1149/1.2429040
出版狀態	Published - 2007

All Science Journal Classification (ASJC) codes

電子、光磁材料
可再生能源、永續發展與環境
表面、塗料和薄膜
電化學
材料化學

UN SDG

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title = "Crack-free high-brightness InGaN/GaN LEDs on Si(111) with initial AlGaN buffer and two LT-Al interlayers",

abstract = "We report the fabrication of low-cost, high-brightness, and crack-free blue GaN light-emitting diodes on Si(111) substrates with AlGaN initial buffer and two low-temperature (LT) AlN interlayers. With 20 mA current injection, it was found that the LED forward voltages were 3.5 and 4.8 V for the horizontal and vertical LEDs, respectively. It was also found that output power of the blue InGaNGaN horizontal blue LED prepared on Si substrate was about 1.5 mW.",

author = "Hsu, {Y. P.} and Chang, {S. J.} and Chen, {W. S.} and Sheu, {J. K.} and Chu, {J. Y.} and Kuo, {C. T.}",

year = "2007",

doi = "10.1149/1.2429040",

language = "English",

volume = "154",

pages = "H191--H193",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

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TY - JOUR

T1 - Crack-free high-brightness InGaN/GaN LEDs on Si(111) with initial AlGaN buffer and two LT-Al interlayers

AU - Hsu, Y. P.

AU - Chang, S. J.

AU - Chen, W. S.

AU - Sheu, J. K.

AU - Chu, J. Y.

AU - Kuo, C. T.

PY - 2007

Y1 - 2007

N2 - We report the fabrication of low-cost, high-brightness, and crack-free blue GaN light-emitting diodes on Si(111) substrates with AlGaN initial buffer and two low-temperature (LT) AlN interlayers. With 20 mA current injection, it was found that the LED forward voltages were 3.5 and 4.8 V for the horizontal and vertical LEDs, respectively. It was also found that output power of the blue InGaNGaN horizontal blue LED prepared on Si substrate was about 1.5 mW.

AB - We report the fabrication of low-cost, high-brightness, and crack-free blue GaN light-emitting diodes on Si(111) substrates with AlGaN initial buffer and two low-temperature (LT) AlN interlayers. With 20 mA current injection, it was found that the LED forward voltages were 3.5 and 4.8 V for the horizontal and vertical LEDs, respectively. It was also found that output power of the blue InGaNGaN horizontal blue LED prepared on Si substrate was about 1.5 mW.

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UR - http://www.scopus.com/inward/citedby.url?scp=33846957196&partnerID=8YFLogxK

U2 - 10.1149/1.2429040

DO - 10.1149/1.2429040

M3 - Article

AN - SCOPUS:33846957196

SN - 0013-4651

VL - 154

SP - H191-H193

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 3

ER -

Crack-free high-brightness InGaN/GaN LEDs on Si(111) with initial AlGaN buffer and two LT-Al interlayers

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