Critical dimension AFM tip characterization and image reconstruction applied to the 45 nm node

Gregory Dahlen, Marc Osborn, Bernard Haochih Liu, Rohit Jain, William Foreman, Jason R. Osborne

研究成果: Conference contribution

28 引文 斯高帕斯(Scopus)


Three significant critical dimension atomic force microscopy (CD AFM) advances are presented in this paper. First, scanning probe image reconstruction methodologies that were formerly limited to parabolic type tip shapes and single-valued surfaces (i.e., non-reentrant topography), are extended to multi- valued surfaces and reentrant tip geometries. This crucial step allows the elimination of image artifacts associated with CD AFM scanning of complex feature shapes using reentrant tips. Second, in situ AFM tip images are provided in an automated tool that enables full image reconstruction. Consequently, for the first time, the combination of in situ tip reconstruction with the inherent reference measurement qualities of the AFM and full morphology reconstruction allow CD AFM metrology essentially free of tip shape effects. As a result, CD AFM is now primarily driven by development of tip geometries that contact the entire specimen surface while retaining adequate tip lifetime. In order to explain the importance of the present development in eliminating measurement bias, the background of CD AFM image dilation is described in detail, and the limitations of "legacy" ID image reconstruction is examined. Initial validation of the automated software is provided by comparison with TEM micrographs. Tip characterizations are presented for a morphologically complex ∼20 nm diameter carbon nanotube tip and reentrant silicon CD32 tips (tip width ∼ 30nm). Finally, the capability for CD AFM to scan a reentrant sub-45 nm width trench is demonstrated. An EUV resist trench was scanned with a CD32 tip (tip width = 27.4 nm). Minimum CD ranged from 42 to 45 nm. Reentrant image reconstruction is shown for the scan cross-section.

主出版物標題Metrology, Inspection, and Process Control for Microlithography XX
出版狀態Published - 2006 七月 10
事件Metrology, Inspection, and Process Control for Microlithography XX - San Jose, CA, United States
持續時間: 2006 一月 202006 一月 23


名字Proceedings of SPIE - The International Society for Optical Engineering
6152 II


OtherMetrology, Inspection, and Process Control for Microlithography XX
國家/地區United States
城市San Jose, CA

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電腦科學應用
  • 應用數學
  • 電氣與電子工程


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