Critical dimension atomic forcemicroscopy for Sub-50-Nm microelectronics technology nodes

Hao Chih Liu, Gregory A. Dahlen, Jason R. Osborne

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)


The chapter discusses recent developments within critical dimension atomic force microscopy (CD AFM) and its application to nanostructures having lateral dimensions of 50 nm and less. Challenges in this measurement range call for research and development in probe design, tip-sample interaction control, tip shape characterization, and image reconstruction algorithms. Design considerations and performance improvements are reviewed throughout the chapter and metrological measurement results are presented with emphasis on industrial applications. CD AFM uses novel probes and advanced scan control algorithms to acquire metrological measurements that are (1) NIST-traceable with subnanometer precision and nanometer-level uncertainty, (2) capable of imaging vertical sidewalls and undercut features, (3) direct, nondestructive and fast relative to existing reference metrology systems (RMS), and (4) multiple cross-sectional, with resolution comparable to that of transmission electron microscopy (TEM). Recently, these attributes have enhanced the role of CD AFM as the RMS for other metrology systems.

頁(從 - 到)31-75
期刊NanoScience and Technology
出版狀態Published - 2008 一月 1

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學
  • 電氣與電子工程


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