Critical thickness of self-assembled Ge quantum dot superlattices

J. L. Liu, J. Wan, K. L. Wang, D. P. Yu

研究成果: Conference article同行評審

9 引文 斯高帕斯(Scopus)


We present the formation of dislocations in thick Ge quantum dot superlattices and the effect of these dislocations on Ge quantum dots. Photoluminescence, TEM and AFM were used to characterize the Ge quantum dot superlattices. For Ge (1.5 nm)/Si (20 nm) superlattices, it was found that the critical thickness was reached when the film thickness was around 0.5 μm. The threading dislocations were formed in the film afterwards and induced circular holes on the surface. Ge quantum dots tended to nucleate at the edge of the holes. The limited critical thickness for Ge quantum dot superlattices is a limitation for applications, such as optoelectronics and thermoelectronics.

頁(從 - 到)666-669
期刊Journal of Crystal Growth
出版狀態Published - 2003 四月
事件Proceedings of the Molecular Beam Epitaxy 2002 - San Francisco, CA, United States
持續時間: 2002 九月 152002 九月 20

All Science Journal Classification (ASJC) codes

  • 凝聚態物理學
  • 無機化學
  • 材料化學


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