Cross-sectional scanning photoelectron microscopy and spectroscopy of wurtzite InNGaN heterojunction: Measurement of "intrinsic" band lineup

Chung Lin Wu, Hong Mao Lee, Cheng Tai Kuo, Chia Hao Chen, Shangjr Gwo

研究成果: Article同行評審

36 引文 斯高帕斯(Scopus)

摘要

A method for studying heterojunction band lineups on the submicrometer scale is demonstrated by using synchrotron-radiation photoelectron microscopy and spectroscopy. In particular, an in situ sample cleavage technique is adopted here to reveal the cross-sectional, nonpolar a -plane face of InNGaN heterojunction grown on Si(111) along the polar -c axis with fully relaxed lattice structure, eliminating the polarization effects associated with the interface charge/dipole normal to the cleaved surface. The "intrinsic" valence band offset at the cleaved InNGaN heterojunction has been determined to be 0.78 eV. Additionally, using known material parameters, the values of InNGaN conduction band offset and InN electron affinity are also estimated.

原文English
文章編號162106
期刊Applied Physics Letters
92
發行號16
DOIs
出版狀態Published - 2008

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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