Crystal orientation of epitaxial oxide film on silicon substrate

Satoru Kaneko, Takashi Tokumasu, Manabu Yasui, Masahito Kurouchi, Shigeo Yasuhara, Tamio Endo, Masaki Azuma, Akufumi Matsuda, Mamoru Yoshimoto, Sumanta Kumar Sahoo, Kripasindhu Sardar, Jyh Ming Ting, Masahiro Yoshimura

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)


Direct growth of oxide films on silicon is usually difficult because of extensive diffusion or chemical reaction between silicon (Si) and oxide materials. Schlom et. al. comprehensively investigate the thermodynamic stability of binary oxides. However the thermodynamic stability does not include factors for epitaxial growth such as lattice mismatch or crystallographic arrangement of oxide deposited on silicon surface. A magnesium oxide (MgO) was taken as an example of oxide materials and the absorption energy estimated on MgO placed on Si surface predicted the crystal orientation of epitaxial growth to be cubic on cubic [MgO(001) // Si(001) and MgO(100) // Si(100)]. These results agreed with experimental results observed on epitaxial MgO films deposited on Si surface. The evaluation of adsorption energy can be guideline for an epitaxial growth of oxide materials on silicon surface.

期刊Applied Surface Science
出版狀態Published - 2022 6月 1

All Science Journal Classification (ASJC) codes

  • 一般化學
  • 凝聚態物理學
  • 一般物理與天文學
  • 表面和介面
  • 表面、塗料和薄膜


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