Crystal polarity effects on magnesium implantation into GaN layer

Kuan Ting Liu, Shoou-Jinn Chang, Sean Wu, Yoshiji Horikoshi

研究成果: Article

2 引文 (Scopus)

摘要

Crystal polarity effects on Mg implantation into GaN layers for p-type doping have been systematically investigated. It is found that we can observe a smaller X-ray diffraction full-width at half-maximum and a stronger Mg-acceptor bound exciton emission for the Mg implantation into Npolarity GaN layer than Ga-polarity one after a proper post-implantation annealing treatment. Raman experiment demonstrates that the tensile stress occurs on the as-grown N-polarity GaN layer, which can be resulting from the Ga vacancy. Hall measurement results further indicate that the p-type conductivity can be successfully obtained for N-polarity GaN compared with Ga-polarity one after Mg implantation regardless of under the identical implantation and post-implantation annealing conditions. These phenomena can all be attributed to the more Ga vacancies in the asgrown N-polarity GaN layer that enhances Mg acceptor substitution and eventually achieve p-type conductive characteristics by an appropriate postimplantation annealing treatment.

原文English
頁(從 - 到)710011-710014
頁數4
期刊Japanese Journal of Applied Physics
49
發行號7 PART 1
DOIs
出版狀態Published - 2010 七月 1

指紋

Magnesium
magnesium
implantation
polarity
Annealing
Crystals
Vacancies
crystals
Full width at half maximum
Tensile stress
Excitons
Ion implantation
annealing
Substitution reactions
Doping (additives)
X ray diffraction
tensile stress
Experiments
excitons
substitutes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

引用此文

Liu, Kuan Ting ; Chang, Shoou-Jinn ; Wu, Sean ; Horikoshi, Yoshiji. / Crystal polarity effects on magnesium implantation into GaN layer. 於: Japanese Journal of Applied Physics. 2010 ; 卷 49, 編號 7 PART 1. 頁 710011-710014.
@article{63a3ecb8317a4eda8a93fd77cb58844a,
title = "Crystal polarity effects on magnesium implantation into GaN layer",
abstract = "Crystal polarity effects on Mg implantation into GaN layers for p-type doping have been systematically investigated. It is found that we can observe a smaller X-ray diffraction full-width at half-maximum and a stronger Mg-acceptor bound exciton emission for the Mg implantation into Npolarity GaN layer than Ga-polarity one after a proper post-implantation annealing treatment. Raman experiment demonstrates that the tensile stress occurs on the as-grown N-polarity GaN layer, which can be resulting from the Ga vacancy. Hall measurement results further indicate that the p-type conductivity can be successfully obtained for N-polarity GaN compared with Ga-polarity one after Mg implantation regardless of under the identical implantation and post-implantation annealing conditions. These phenomena can all be attributed to the more Ga vacancies in the asgrown N-polarity GaN layer that enhances Mg acceptor substitution and eventually achieve p-type conductive characteristics by an appropriate postimplantation annealing treatment.",
author = "Liu, {Kuan Ting} and Shoou-Jinn Chang and Sean Wu and Yoshiji Horikoshi",
year = "2010",
month = "7",
day = "1",
doi = "10.1143/JJAP.49.071001",
language = "English",
volume = "49",
pages = "710011--710014",
journal = "Japanese Journal of Applied Physics",
issn = "0021-4922",
number = "7 PART 1",

}

Crystal polarity effects on magnesium implantation into GaN layer. / Liu, Kuan Ting; Chang, Shoou-Jinn; Wu, Sean; Horikoshi, Yoshiji.

於: Japanese Journal of Applied Physics, 卷 49, 編號 7 PART 1, 01.07.2010, p. 710011-710014.

研究成果: Article

TY - JOUR

T1 - Crystal polarity effects on magnesium implantation into GaN layer

AU - Liu, Kuan Ting

AU - Chang, Shoou-Jinn

AU - Wu, Sean

AU - Horikoshi, Yoshiji

PY - 2010/7/1

Y1 - 2010/7/1

N2 - Crystal polarity effects on Mg implantation into GaN layers for p-type doping have been systematically investigated. It is found that we can observe a smaller X-ray diffraction full-width at half-maximum and a stronger Mg-acceptor bound exciton emission for the Mg implantation into Npolarity GaN layer than Ga-polarity one after a proper post-implantation annealing treatment. Raman experiment demonstrates that the tensile stress occurs on the as-grown N-polarity GaN layer, which can be resulting from the Ga vacancy. Hall measurement results further indicate that the p-type conductivity can be successfully obtained for N-polarity GaN compared with Ga-polarity one after Mg implantation regardless of under the identical implantation and post-implantation annealing conditions. These phenomena can all be attributed to the more Ga vacancies in the asgrown N-polarity GaN layer that enhances Mg acceptor substitution and eventually achieve p-type conductive characteristics by an appropriate postimplantation annealing treatment.

AB - Crystal polarity effects on Mg implantation into GaN layers for p-type doping have been systematically investigated. It is found that we can observe a smaller X-ray diffraction full-width at half-maximum and a stronger Mg-acceptor bound exciton emission for the Mg implantation into Npolarity GaN layer than Ga-polarity one after a proper post-implantation annealing treatment. Raman experiment demonstrates that the tensile stress occurs on the as-grown N-polarity GaN layer, which can be resulting from the Ga vacancy. Hall measurement results further indicate that the p-type conductivity can be successfully obtained for N-polarity GaN compared with Ga-polarity one after Mg implantation regardless of under the identical implantation and post-implantation annealing conditions. These phenomena can all be attributed to the more Ga vacancies in the asgrown N-polarity GaN layer that enhances Mg acceptor substitution and eventually achieve p-type conductive characteristics by an appropriate postimplantation annealing treatment.

UR - http://www.scopus.com/inward/record.url?scp=77956536834&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77956536834&partnerID=8YFLogxK

U2 - 10.1143/JJAP.49.071001

DO - 10.1143/JJAP.49.071001

M3 - Article

AN - SCOPUS:77956536834

VL - 49

SP - 710011

EP - 710014

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 7 PART 1

ER -